Engineering Atomic Defects in Hexagonal Boron Nitride via Resonant Optical Excitation of Phonons

M. Mehdi Jadidi, Cecilia Y. Chen, Baichang Li, Jared S. Ginsberg, Sang Hoon Chae, Chaitali Joshi, Gauri Patwardhan, Kenji Watanabe, Takashi Taniguchi, James Hone, Alexander L. Gaeta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We introduce an approach to engineer defects in hBN using intense pulses resonant with phonons at 7.3 μm. Such defects are highly subwavelength < 30 nm) with an alignment sensitive to the polarization.

Original languageEnglish
Title of host publication2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781943580767
Publication statusPublished - May 2020
Externally publishedYes
Event2020 Conference on Lasers and Electro-Optics, CLEO 2020 - San Jose, United States
Duration: May 10 2020May 15 2020

Publication series

NameConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume2020-May
ISSN (Print)1092-8081

Conference

Conference2020 Conference on Lasers and Electro-Optics, CLEO 2020
Country/TerritoryUnited States
CitySan Jose
Period5/10/205/15/20

Bibliographical note

Publisher Copyright:
© 2020 OSA.

ASJC Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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