Enhanced near-room-temperature thermoelectric performance in GeTe

Xian Yi Tan; Jin Feng Dong; Ning Jia; Hong Xia Zhang; Rong Ji; Ady Suwardi; Zhi Liang Li; Qiang Zhu; Jian Wei Xu; Qing Yu Yan

doi:10.1007/s12598-022-02036-8

Enhanced near-room-temperature thermoelectric performance in GeTe

Xian Yi Tan, Jin Feng Dong^*, Ning Jia, Hong Xia Zhang, Rong Ji, Ady Suwardi, Zhi Liang Li, Qiang Zhu, Jian Wei Xu, Qing Yu Yan^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

GeTe is an excellent mid-temperature thermoelectric material with high dimensionless figure of merit (ZT) values at temperatures over 600 K. Its near-room-temperature performance is less studied due to the intrinsic high carrier concentration. Here, we successfully enhance the Seebeck coefficient of GeTe from ~ 30 to 220 μV·K⁻¹ at 300 K, which is achieved by AgInSe₂ alloying and Bi doping. It is demonstrated that Bi doping helps to optimize the Seebeck coefficient without deteriorating the intrinsic electrical transport properties of the matrix. A high room-temperature power factor (PF) of ~ 11 μW·cm⁻¹·K⁻² is achieved for a wide range of Bi-doped samples. The simultaneously introduced abundant point defects cause mass and strain fluctuations, which decrease the lattice thermal conductivity (κ_L) to a low value of 0.6 W·m⁻¹·K⁻¹ at 300 K. Due to the synergetic effects of Bi doping in AgInSe₂-alloyed GeTe, a high room-temperature ZT value of 0.46 is obtained together with a high ZT value of 1.1 at 523 K. Graphical abstract: [Figure not available: see fulltext.]

Original language	English
Pages (from-to)	3027-3034
Number of pages	8
Journal	Rare Metals
Volume	41
Issue number	9
DOIs	https://doi.org/10.1007/s12598-022-02036-8
Publication status	Published - Sept 2022
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2022, Youke Publishing Co.,Ltd.

ASJC Scopus Subject Areas

Condensed Matter Physics
Physical and Theoretical Chemistry
Metals and Alloys
Materials Chemistry

Keywords

GeTe
Room-temperature ZT
Thermal conductivity
Thermoelectric

Access to Document

10.1007/s12598-022-02036-8

Cite this

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title = "Enhanced near-room-temperature thermoelectric performance in GeTe",

abstract = "GeTe is an excellent mid-temperature thermoelectric material with high dimensionless figure of merit (ZT) values at temperatures over 600 K. Its near-room-temperature performance is less studied due to the intrinsic high carrier concentration. Here, we successfully enhance the Seebeck coefficient of GeTe from \textasciitilde{} 30 to 220 μV·K−1 at 300 K, which is achieved by AgInSe2 alloying and Bi doping. It is demonstrated that Bi doping helps to optimize the Seebeck coefficient without deteriorating the intrinsic electrical transport properties of the matrix. A high room-temperature power factor (PF) of \textasciitilde{} 11 μW·cm−1·K−2 is achieved for a wide range of Bi-doped samples. The simultaneously introduced abundant point defects cause mass and strain fluctuations, which decrease the lattice thermal conductivity (κL) to a low value of 0.6 W·m−1·K−1 at 300 K. Due to the synergetic effects of Bi doping in AgInSe2-alloyed GeTe, a high room-temperature ZT value of 0.46 is obtained together with a high ZT value of 1.1 at 523 K. Graphical abstract: [Figure not available: see fulltext.]",

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T1 - Enhanced near-room-temperature thermoelectric performance in GeTe

AU - Tan, Xian Yi

AU - Dong, Jin Feng

AU - Jia, Ning

AU - Zhang, Hong Xia

AU - Ji, Rong

AU - Suwardi, Ady

AU - Li, Zhi Liang

AU - Zhu, Qiang

AU - Xu, Jian Wei

AU - Yan, Qing Yu

PY - 2022/9

Y1 - 2022/9

N2 - GeTe is an excellent mid-temperature thermoelectric material with high dimensionless figure of merit (ZT) values at temperatures over 600 K. Its near-room-temperature performance is less studied due to the intrinsic high carrier concentration. Here, we successfully enhance the Seebeck coefficient of GeTe from ~ 30 to 220 μV·K−1 at 300 K, which is achieved by AgInSe2 alloying and Bi doping. It is demonstrated that Bi doping helps to optimize the Seebeck coefficient without deteriorating the intrinsic electrical transport properties of the matrix. A high room-temperature power factor (PF) of ~ 11 μW·cm−1·K−2 is achieved for a wide range of Bi-doped samples. The simultaneously introduced abundant point defects cause mass and strain fluctuations, which decrease the lattice thermal conductivity (κL) to a low value of 0.6 W·m−1·K−1 at 300 K. Due to the synergetic effects of Bi doping in AgInSe2-alloyed GeTe, a high room-temperature ZT value of 0.46 is obtained together with a high ZT value of 1.1 at 523 K. Graphical abstract: [Figure not available: see fulltext.]

AB - GeTe is an excellent mid-temperature thermoelectric material with high dimensionless figure of merit (ZT) values at temperatures over 600 K. Its near-room-temperature performance is less studied due to the intrinsic high carrier concentration. Here, we successfully enhance the Seebeck coefficient of GeTe from ~ 30 to 220 μV·K−1 at 300 K, which is achieved by AgInSe2 alloying and Bi doping. It is demonstrated that Bi doping helps to optimize the Seebeck coefficient without deteriorating the intrinsic electrical transport properties of the matrix. A high room-temperature power factor (PF) of ~ 11 μW·cm−1·K−2 is achieved for a wide range of Bi-doped samples. The simultaneously introduced abundant point defects cause mass and strain fluctuations, which decrease the lattice thermal conductivity (κL) to a low value of 0.6 W·m−1·K−1 at 300 K. Due to the synergetic effects of Bi doping in AgInSe2-alloyed GeTe, a high room-temperature ZT value of 0.46 is obtained together with a high ZT value of 1.1 at 523 K. Graphical abstract: [Figure not available: see fulltext.]

KW - GeTe

KW - Room-temperature ZT

KW - Thermal conductivity

KW - Thermoelectric

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Enhanced near-room-temperature thermoelectric performance in GeTe

Abstract

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Keywords

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