Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack

P. S. Lee; D. Mangelinck; K. L. Pey; J. Ding; D. Z. Chi; T. Osipowicz; J. Y. Dai; A. See

doi:10.1016/S0167-9317(01)00592-5

Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack

P. S. Lee^*, D. Mangelinck, K. L. Pey, J. Ding, D. Z. Chi, T. Osipowicz, J. Y. Dai, A. See

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

23 Citations (Scopus)

Abstract

The formation and stability of Ni(Pt)Si on metal oxide semiconductor field effect transistor (MOSFETs) polycrystalline-Si (poly-Si) gate stack was investigated. Poly-Si and partial amorphous Si (a-Si) structures were grown using LPCVD and RTCVD techniques. For pure Ni silicidation, nucleation of NiSi₂ was found at 700°C, which is slightly lower than that on monocrystalline Si (about 750°C). With Pt addition, Ni(Pt)Si was found up to 800°C, implying the important role of Gibbs free energy changes in enhancing the monosilicide stability. The extent of layer inversion of Ni(Pt)Si on RTCVD-Si is less than that on LPCVD-Si and thus results in a slower sheet resistance degradation.

Original language	English
Pages (from-to)	171-181
Number of pages	11
Journal	Microelectronic Engineering
Volume	60
Issue number	1-2
DOIs	https://doi.org/10.1016/S0167-9317(01)00592-5
Publication status	Published - Jan 2002
Externally published	Yes
Event	Materials for Advanced Metallization (MAM 2001) - Sigtuna, Sweden Duration: Mar 5 2001 → Mar 7 2001

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Keywords

Layer inversion
LPCVD
Ni silicidation
Ni(Pt)Si
RTCVD

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10.1016/S0167-9317(01)00592-5

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title = "Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack",

abstract = "The formation and stability of Ni(Pt)Si on metal oxide semiconductor field effect transistor (MOSFETs) polycrystalline-Si (poly-Si) gate stack was investigated. Poly-Si and partial amorphous Si (a-Si) structures were grown using LPCVD and RTCVD techniques. For pure Ni silicidation, nucleation of NiSi2 was found at 700°C, which is slightly lower than that on monocrystalline Si (about 750°C). With Pt addition, Ni(Pt)Si was found up to 800°C, implying the important role of Gibbs free energy changes in enhancing the monosilicide stability. The extent of layer inversion of Ni(Pt)Si on RTCVD-Si is less than that on LPCVD-Si and thus results in a slower sheet resistance degradation.",

keywords = "Layer inversion, LPCVD, Ni silicidation, Ni(Pt)Si, RTCVD",

author = "Lee, {P. S.} and D. Mangelinck and Pey, {K. L.} and J. Ding and Chi, {D. Z.} and T. Osipowicz and Dai, {J. Y.} and A. See",

year = "2002",

month = jan,

doi = "10.1016/S0167-9317(01)00592-5",

language = "English",

volume = "60",

pages = "171--181",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "1-2",

note = "Materials for Advanced Metallization (MAM 2001) ; Conference date: 05-03-2001 Through 07-03-2001",

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TY - JOUR

T1 - Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack

AU - Lee, P. S.

AU - Mangelinck, D.

AU - Pey, K. L.

AU - Ding, J.

AU - Chi, D. Z.

AU - Osipowicz, T.

AU - Dai, J. Y.

AU - See, A.

PY - 2002/1

Y1 - 2002/1

N2 - The formation and stability of Ni(Pt)Si on metal oxide semiconductor field effect transistor (MOSFETs) polycrystalline-Si (poly-Si) gate stack was investigated. Poly-Si and partial amorphous Si (a-Si) structures were grown using LPCVD and RTCVD techniques. For pure Ni silicidation, nucleation of NiSi2 was found at 700°C, which is slightly lower than that on monocrystalline Si (about 750°C). With Pt addition, Ni(Pt)Si was found up to 800°C, implying the important role of Gibbs free energy changes in enhancing the monosilicide stability. The extent of layer inversion of Ni(Pt)Si on RTCVD-Si is less than that on LPCVD-Si and thus results in a slower sheet resistance degradation.

AB - The formation and stability of Ni(Pt)Si on metal oxide semiconductor field effect transistor (MOSFETs) polycrystalline-Si (poly-Si) gate stack was investigated. Poly-Si and partial amorphous Si (a-Si) structures were grown using LPCVD and RTCVD techniques. For pure Ni silicidation, nucleation of NiSi2 was found at 700°C, which is slightly lower than that on monocrystalline Si (about 750°C). With Pt addition, Ni(Pt)Si was found up to 800°C, implying the important role of Gibbs free energy changes in enhancing the monosilicide stability. The extent of layer inversion of Ni(Pt)Si on RTCVD-Si is less than that on LPCVD-Si and thus results in a slower sheet resistance degradation.

KW - Layer inversion

KW - LPCVD

KW - Ni silicidation

KW - Ni(Pt)Si

KW - RTCVD

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UR - http://www.scopus.com/inward/citedby.url?scp=0036132997&partnerID=8YFLogxK

U2 - 10.1016/S0167-9317(01)00592-5

DO - 10.1016/S0167-9317(01)00592-5

M3 - Conference article

AN - SCOPUS:0036132997

SN - 0167-9317

VL - 60

SP - 171

EP - 181

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-2

T2 - Materials for Advanced Metallization (MAM 2001)

Y2 - 5 March 2001 through 7 March 2001

ER -

Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stack

Abstract

ASJC Scopus Subject Areas

Keywords

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