Erbium silicidation on SiGe for advanced MOS application

Q. F. Daphne Yiew; Y. Setiawan; P. S. Lee; D. Z. Chi

doi:10.1016/j.tsf.2005.09.048

Erbium silicidation on SiGe for advanced MOS application

Q. F. Daphne Yiew, Y. Setiawan^*, P. S. Lee, D. Z. Chi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Ti capping has been found to be beneficial on Er(Si_1-yGe _y)₂ formation in Ti/Er/Si_1-xGe_x system. In the case of the system without Ti cap, the sample was oxidized at temperature as low as 300 °C and Er₂SiO₅ was found to be the predominant phase at all annealing temperatures. On the other hand, for Ti/Er/Si_1-xGe_x samples, no Er₂O₃ was formed and the predominant phase found after annealing at higher temperature was Er(Si_1-yGe_y)₂ resulting in a lower sheet resistance than those without Ti cap. In addition, Ti capping has also improved the surface morphology of the sample by reducing the pyramid-like defects which were found in Er/Si_1-xGe_x samples especially after annealing at 600 °C.

Original language	English
Pages (from-to)	91-94
Number of pages	4
Journal	Thin Solid Films
Volume	504
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.09.048
Publication status	Published - May 10 2006
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Keywords

Erbium silicide
SiGe

Access to Document

10.1016/j.tsf.2005.09.048

Cite this

@article{e4e54e5180d349b5888a1b78f7b46ed2,

title = "Erbium silicidation on SiGe for advanced MOS application",

abstract = "Ti capping has been found to be beneficial on Er(Si1-yGe y)2 formation in Ti/Er/Si1-xGex system. In the case of the system without Ti cap, the sample was oxidized at temperature as low as 300 °C and Er2SiO5 was found to be the predominant phase at all annealing temperatures. On the other hand, for Ti/Er/Si1-xGex samples, no Er2O3 was formed and the predominant phase found after annealing at higher temperature was Er(Si1-yGey)2 resulting in a lower sheet resistance than those without Ti cap. In addition, Ti capping has also improved the surface morphology of the sample by reducing the pyramid-like defects which were found in Er/Si1-xGex samples especially after annealing at 600 °C.",

keywords = "Erbium silicide, SiGe",

author = "{Daphne Yiew}, {Q. F.} and Y. Setiawan and Lee, {P. S.} and Chi, {D. Z.}",

year = "2006",

month = may,

day = "10",

doi = "10.1016/j.tsf.2005.09.048",

language = "English",

volume = "504",

pages = "91--94",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Erbium silicidation on SiGe for advanced MOS application

AU - Daphne Yiew, Q. F.

AU - Setiawan, Y.

AU - Lee, P. S.

AU - Chi, D. Z.

PY - 2006/5/10

Y1 - 2006/5/10

N2 - Ti capping has been found to be beneficial on Er(Si1-yGe y)2 formation in Ti/Er/Si1-xGex system. In the case of the system without Ti cap, the sample was oxidized at temperature as low as 300 °C and Er2SiO5 was found to be the predominant phase at all annealing temperatures. On the other hand, for Ti/Er/Si1-xGex samples, no Er2O3 was formed and the predominant phase found after annealing at higher temperature was Er(Si1-yGey)2 resulting in a lower sheet resistance than those without Ti cap. In addition, Ti capping has also improved the surface morphology of the sample by reducing the pyramid-like defects which were found in Er/Si1-xGex samples especially after annealing at 600 °C.

AB - Ti capping has been found to be beneficial on Er(Si1-yGe y)2 formation in Ti/Er/Si1-xGex system. In the case of the system without Ti cap, the sample was oxidized at temperature as low as 300 °C and Er2SiO5 was found to be the predominant phase at all annealing temperatures. On the other hand, for Ti/Er/Si1-xGex samples, no Er2O3 was formed and the predominant phase found after annealing at higher temperature was Er(Si1-yGey)2 resulting in a lower sheet resistance than those without Ti cap. In addition, Ti capping has also improved the surface morphology of the sample by reducing the pyramid-like defects which were found in Er/Si1-xGex samples especially after annealing at 600 °C.

KW - Erbium silicide

KW - SiGe

UR - http://www.scopus.com/inward/record.url?scp=33644893040&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33644893040&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2005.09.048

DO - 10.1016/j.tsf.2005.09.048

M3 - Article

AN - SCOPUS:33644893040

SN - 0040-6090

VL - 504

SP - 91

EP - 94

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Erbium silicidation on SiGe for advanced MOS application

Abstract

ASJC Scopus Subject Areas

Keywords

Access to Document

Other files and links

Fingerprint

Cite this