Erbium silicided schottky source/drain silicon nanowire N-metal-oxide-semiconductor field-effect transistors

Eu Jin Tan; Kin Leong Pey; Navab Singh; Dong Zhi Chi; Guo Qiang Lo; Pooi See Lee; Keat Mun Hoe; Yoke King Chin; Guang Da Cui

doi:10.1143/JJAP.47.3277

Erbium silicided schottky source/drain silicon nanowire N-metal-oxide-semiconductor field-effect transistors

Eu Jin Tan, Kin Leong Pey, Navab Singh, Dong Zhi Chi, Guo Qiang Lo, Pooi See Lee, Keat Mun Hoe, Yoke King Chin, Guang Da Cui

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Schottky source/drain (S/D) N-metal-oxide-semiconductor-field-effect transistor (MOSFET) have been fabricated using a simplified top down process with silicon nanowires (SiNW) as the channel body and ErSi_2-x as the metal silicide S/D. Despite the use of a thick buried oxide (BOX) layer as the gate dielectric, the devices show good electrical characteristics with high I_on/I_off ratio of ∼10₅, high drive current of ∼900μA/μm, which are significantly higher than those previously reported Schottky S/D MOSFETs without barrier-modified junctions. The effect of physical characteristics such as metal-silicided junction depth, number of SiNW channels, and metal-semiconductor junction size were investigated and found to have a direct effect on the electrical performance of the devices. Current transport as a function of Schottky barrier height (Φ_beff) modulation was also studied.

Original language	English
Pages (from-to)	3277-3281
Number of pages	5
Journal	Japanese Journal of Applied Physics
Volume	47
Issue number	4 PART 2
DOIs	https://doi.org/10.1143/JJAP.47.3277
Publication status	Published - Apr 25 2008
Externally published	Yes

ASJC Scopus Subject Areas

General Engineering
General Physics and Astronomy

Keywords

Erbium suicide
Schottky source/drain MOSFET
Silicon nanowire

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1143/JJAP.47.3277

Cite this

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title = "Erbium silicided schottky source/drain silicon nanowire N-metal-oxide-semiconductor field-effect transistors",

abstract = "Schottky source/drain (S/D) N-metal-oxide-semiconductor-field-effect transistor (MOSFET) have been fabricated using a simplified top down process with silicon nanowires (SiNW) as the channel body and ErSi2-x as the metal silicide S/D. Despite the use of a thick buried oxide (BOX) layer as the gate dielectric, the devices show good electrical characteristics with high Ion/Ioff ratio of ∼105, high drive current of ∼900μA/μm, which are significantly higher than those previously reported Schottky S/D MOSFETs without barrier-modified junctions. The effect of physical characteristics such as metal-silicided junction depth, number of SiNW channels, and metal-semiconductor junction size were investigated and found to have a direct effect on the electrical performance of the devices. Current transport as a function of Schottky barrier height (Φbeff) modulation was also studied.",

keywords = "Erbium suicide, Schottky source/drain MOSFET, Silicon nanowire",

author = "Tan, {Eu Jin} and Pey, {Kin Leong} and Navab Singh and Chi, {Dong Zhi} and Lo, {Guo Qiang} and Lee, {Pooi See} and Hoe, {Keat Mun} and Chin, {Yoke King} and Cui, {Guang Da}",

year = "2008",

month = apr,

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doi = "10.1143/JJAP.47.3277",

language = "English",

volume = "47",

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T1 - Erbium silicided schottky source/drain silicon nanowire N-metal-oxide-semiconductor field-effect transistors

AU - Tan, Eu Jin

AU - Pey, Kin Leong

AU - Singh, Navab

AU - Chi, Dong Zhi

AU - Lo, Guo Qiang

AU - Lee, Pooi See

AU - Hoe, Keat Mun

AU - Chin, Yoke King

AU - Cui, Guang Da

PY - 2008/4/25

Y1 - 2008/4/25

N2 - Schottky source/drain (S/D) N-metal-oxide-semiconductor-field-effect transistor (MOSFET) have been fabricated using a simplified top down process with silicon nanowires (SiNW) as the channel body and ErSi2-x as the metal silicide S/D. Despite the use of a thick buried oxide (BOX) layer as the gate dielectric, the devices show good electrical characteristics with high Ion/Ioff ratio of ∼105, high drive current of ∼900μA/μm, which are significantly higher than those previously reported Schottky S/D MOSFETs without barrier-modified junctions. The effect of physical characteristics such as metal-silicided junction depth, number of SiNW channels, and metal-semiconductor junction size were investigated and found to have a direct effect on the electrical performance of the devices. Current transport as a function of Schottky barrier height (Φbeff) modulation was also studied.

AB - Schottky source/drain (S/D) N-metal-oxide-semiconductor-field-effect transistor (MOSFET) have been fabricated using a simplified top down process with silicon nanowires (SiNW) as the channel body and ErSi2-x as the metal silicide S/D. Despite the use of a thick buried oxide (BOX) layer as the gate dielectric, the devices show good electrical characteristics with high Ion/Ioff ratio of ∼105, high drive current of ∼900μA/μm, which are significantly higher than those previously reported Schottky S/D MOSFETs without barrier-modified junctions. The effect of physical characteristics such as metal-silicided junction depth, number of SiNW channels, and metal-semiconductor junction size were investigated and found to have a direct effect on the electrical performance of the devices. Current transport as a function of Schottky barrier height (Φbeff) modulation was also studied.

KW - Erbium suicide

KW - Schottky source/drain MOSFET

KW - Silicon nanowire

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Erbium silicided schottky source/drain silicon nanowire N-metal-oxide-semiconductor field-effect transistors

Abstract

ASJC Scopus Subject Areas

Keywords

UN SDGs

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