Erratum: Adhesion study of low-k/Si system using 4-point bending and nanoscratch test (Materials Science and Engineering B (2005) 121:3 (193-198) PII: S0921510705002175 DOI: 10.1016/j.mseb.2005.03.030)

M. Damayanti; J. Widodo; T. Sritharan; S. G. Mhaisalkar; W. Lu; Z. H. Gan; K. Y. Zeng; L. C. Hsia

doi:10.1016/j.mseb.2005.06.013

Erratum: Adhesion study of low-k/Si system using 4-point bending and nanoscratch test (Materials Science and Engineering B (2005) 121:3 (193-198) PII: S0921510705002175 DOI: 10.1016/j.mseb.2005.03.030)

M. Damayanti^*, J. Widodo, T. Sritharan, S. G. Mhaisalkar, W. Lu, Z. H. Gan, K. Y. Zeng, L. C. Hsia

^*Corresponding author for this work

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English
Pages (from-to)	249
Number of pages	1
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	122
Issue number	3
DOIs	https://doi.org/10.1016/j.mseb.2005.06.013
Publication status	Published - Sept 25 2005
Externally published	Yes

ASJC Scopus Subject Areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.mseb.2005.06.013

Cite this

Damayanti, M., Widodo, J., Sritharan, T., Mhaisalkar, S. G., Lu, W., Gan, Z. H., Zeng, K. Y., & Hsia, L. C. (2005). Erratum: Adhesion study of low-k/Si system using 4-point bending and nanoscratch test (Materials Science and Engineering B (2005) 121:3 (193-198) PII: S0921510705002175 DOI: 10.1016/j.mseb.2005.03.030). Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 122(3), 249. https://doi.org/10.1016/j.mseb.2005.06.013

Damayanti, M. ; Widodo, J. ; Sritharan, T. et al. / Erratum : Adhesion study of low-k/Si system using 4-point bending and nanoscratch test (Materials Science and Engineering B (2005) 121:3 (193-198) PII: S0921510705002175 DOI: 10.1016/j.mseb.2005.03.030). In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 2005 ; Vol. 122, No. 3. pp. 249.

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title = "Erratum: Adhesion study of low-k/Si system using 4-point bending and nanoscratch test (Materials Science and Engineering B (2005) 121:3 (193-198) PII: S0921510705002175 DOI: 10.1016/j.mseb.2005.03.030)",

author = "M. Damayanti and J. Widodo and T. Sritharan and Mhaisalkar, {S. G.} and W. Lu and Gan, {Z. H.} and Zeng, {K. Y.} and Hsia, {L. C.}",

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Damayanti, M, Widodo, J, Sritharan, T, Mhaisalkar, SG, Lu, W, Gan, ZH, Zeng, KY & Hsia, LC 2005, 'Erratum: Adhesion study of low-k/Si system using 4-point bending and nanoscratch test (Materials Science and Engineering B (2005) 121:3 (193-198) PII: S0921510705002175 DOI: 10.1016/j.mseb.2005.03.030)', Materials Science and Engineering B: Solid-State Materials for Advanced Technology, vol. 122, no. 3, pp. 249. https://doi.org/10.1016/j.mseb.2005.06.013

Erratum: Adhesion study of low-k/Si system using 4-point bending and nanoscratch test (Materials Science and Engineering B (2005) 121:3 (193-198) PII: S0921510705002175 DOI: 10.1016/j.mseb.2005.03.030). / Damayanti, M.; Widodo, J.; Sritharan, T. et al.
In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 122, No. 3, 25.09.2005, p. 249.

Research output: Contribution to journal › Comment/debate › peer-review

TY - JOUR

T1 - Erratum

T2 - Adhesion study of low-k/Si system using 4-point bending and nanoscratch test (Materials Science and Engineering B (2005) 121:3 (193-198) PII: S0921510705002175 DOI: 10.1016/j.mseb.2005.03.030)

AU - Damayanti, M.

AU - Widodo, J.

AU - Sritharan, T.

AU - Mhaisalkar, S. G.

AU - Lu, W.

AU - Gan, Z. H.

AU - Zeng, K. Y.

AU - Hsia, L. C.

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AN - SCOPUS:24144434077

SN - 0921-5107

VL - 122

SP - 249

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 3

ER -

Damayanti M, Widodo J, Sritharan T, Mhaisalkar SG, Lu W, Gan ZH et al. Erratum: Adhesion study of low-k/Si system using 4-point bending and nanoscratch test (Materials Science and Engineering B (2005) 121:3 (193-198) PII: S0921510705002175 DOI: 10.1016/j.mseb.2005.03.030). Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 2005 Sept 25;122(3):249. doi: 10.1016/j.mseb.2005.06.013

Erratum: Adhesion study of low-k/Si system using 4-point bending and nanoscratch test (Materials Science and Engineering B (2005) 121:3 (193-198) PII: S0921510705002175 DOI: 10.1016/j.mseb.2005.03.030)

ASJC Scopus Subject Areas

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