TY - GEN
T1 - Evaluation of mechanical property of Sn-Ag bonding layer adopting Ni(P)/Cu Bi-layer diffusion barrier for 3D integration
AU - Lee, Byunghoon
AU - Lip, Gan Chee
AU - Lee, Hoo Jeong
PY - 2013
Y1 - 2013
N2 - The mechanical properties of bonding layer have a great impact on the reliability of 3D integration. In this study, to improve the mechanical properties of bonds, Sn-Ag solder layer and the Ni(P)/Cu bi-layer diffusion barrier were adopted for high reliability of 3D integration bonding. These combinations reveal noticeably high bonding strength and can be explained through their microstructures. The bonding strength increased drastically between 200°C and 250°C, which suggested that the microstructure evolution of the bonding layer influenced the bonding strength greatly. For the samples with a Sn-Ag bonding layer, the bonding strength is much higher than that of Sn bonding layer sample, in the range of 250°C and 275°C. These results can be attributed to the presence of small Ag3Sn IMCs that had formed in high density and were dispersed throughout the bonding layer, which improved the mechanical strength. This result highlights the possibility of acquiring a control window to produce a bonding structure with a high mechanical reliability on Cu pillar bonding.
AB - The mechanical properties of bonding layer have a great impact on the reliability of 3D integration. In this study, to improve the mechanical properties of bonds, Sn-Ag solder layer and the Ni(P)/Cu bi-layer diffusion barrier were adopted for high reliability of 3D integration bonding. These combinations reveal noticeably high bonding strength and can be explained through their microstructures. The bonding strength increased drastically between 200°C and 250°C, which suggested that the microstructure evolution of the bonding layer influenced the bonding strength greatly. For the samples with a Sn-Ag bonding layer, the bonding strength is much higher than that of Sn bonding layer sample, in the range of 250°C and 275°C. These results can be attributed to the presence of small Ag3Sn IMCs that had formed in high density and were dispersed throughout the bonding layer, which improved the mechanical strength. This result highlights the possibility of acquiring a control window to produce a bonding structure with a high mechanical reliability on Cu pillar bonding.
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U2 - 10.1109/EPTC.2013.6745768
DO - 10.1109/EPTC.2013.6745768
M3 - Conference contribution
AN - SCOPUS:84897746148
SN - 9781479928330
T3 - Proceedings of the 2013 IEEE 15th Electronics Packaging Technology Conference, EPTC 2013
SP - 489
EP - 492
BT - Proceedings of the 2013 IEEE 15th Electronics Packaging Technology Conference, EPTC 2013
T2 - 2013 IEEE 15th Electronics Packaging Technology Conference, EPTC 2013
Y2 - 11 December 2013 through 13 December 2013
ER -