Evaluation of thin film by chemical vapor deposition using x-ray diffraction

The reverse multiplicate technique of Moire interferometry is introduced. In this method, shear reverse, carrier wave, multiplicate and optical Fourier processing technique are combined cleverly and applied successfully to the Moire interferometry. When the deformed patterns of Moire interferometry with carrier wave are multiplied using carrier wave frequency, the deformed information of the specimen are multiplied successfully at the same time. As a final experimental result, the Moire fringes are multiplied clearly by 16 times, and measuring displacement sensitivity is increased from 0.4 micrometer to 0.025 micrometer. This method is applied to measure in-plane displacement fields around interlayer crack-tip of metal film/ceramic substrate under different thermal loading. From experimental displacement fields, the strain fields around interlayer crack-tip can be obtained as well. The displacement singularity of crack-tip is analyzed. The experimental results show that the displacement singularity of interlayer crack-tip under thermal loading is exponential singularity related with the material properties of the specimen.