Experiments and models for circuit-level assessment of the reliability of Cu metallization

C. V. Thompson; C. L. Gan; S. M. Alam; D. E. Troxel

Experiments and models for circuit-level assessment of the reliability of Cu metallization

C. V. Thompson^*, C. L. Gan, S. M. Alam, D. E. Troxel

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

Accurate circuit-level reliability analyses can be based on experimental results for simple interconnect segments if interconnect trees, linked interconnect segments within one level of metallization, are used as fundamental reliability units. The reliability behavior of both segments and trees is different for Al and Cu. A revised method is proposed for tree-based circuit-level reliability analyses for Cu. The types of additional experimental data that would allow assessments with improved accuracy are outlined.

Original language	English
Title of host publication	Proceedings of the IEEE 2004 International Interconnect Technology Conference
Pages	69-71
Number of pages	3
Publication status	Published - 2004
Externally published	Yes
Event	Proceedings of the IEEE 2004 International Interconnect Technology Conference - Burlingame, CA, United States Duration: Jun 7 2004 → Jun 9 2004

Publication series

Name	Proceedings of the IEEE 2004 International Interconnect Technology Conference

Conference

Conference	Proceedings of the IEEE 2004 International Interconnect Technology Conference
Country/Territory	United States
City	Burlingame, CA
Period	6/7/04 → 6/9/04

ASJC Scopus Subject Areas

General Engineering

Cite this

@inproceedings{4f32199505f0490ba9b083408303365a,

title = "Experiments and models for circuit-level assessment of the reliability of Cu metallization",

abstract = "Accurate circuit-level reliability analyses can be based on experimental results for simple interconnect segments if interconnect trees, linked interconnect segments within one level of metallization, are used as fundamental reliability units. The reliability behavior of both segments and trees is different for Al and Cu. A revised method is proposed for tree-based circuit-level reliability analyses for Cu. The types of additional experimental data that would allow assessments with improved accuracy are outlined.",

author = "Thompson, \{C. V.\} and Gan, \{C. L.\} and Alam, \{S. M.\} and Troxel, \{D. E.\}",

year = "2004",

language = "English",

isbn = "0780383087",

series = "Proceedings of the IEEE 2004 International Interconnect Technology Conference",

pages = "69--71",

booktitle = "Proceedings of the IEEE 2004 International Interconnect Technology Conference",

note = "Proceedings of the IEEE 2004 International Interconnect Technology Conference ; Conference date: 07-06-2004 Through 09-06-2004",

}

Thompson, CV, Gan, CL, Alam, SM & Troxel, DE 2004, Experiments and models for circuit-level assessment of the reliability of Cu metallization. in Proceedings of the IEEE 2004 International Interconnect Technology Conference. Proceedings of the IEEE 2004 International Interconnect Technology Conference, pp. 69-71, Proceedings of the IEEE 2004 International Interconnect Technology Conference, Burlingame, CA, United States, 6/7/04.

Experiments and models for circuit-level assessment of the reliability of Cu metallization. / Thompson, C. V.; Gan, C. L.; Alam, S. M. et al.
Proceedings of the IEEE 2004 International Interconnect Technology Conference. 2004. p. 69-71 (Proceedings of the IEEE 2004 International Interconnect Technology Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Experiments and models for circuit-level assessment of the reliability of Cu metallization

AU - Thompson, C. V.

AU - Gan, C. L.

AU - Alam, S. M.

AU - Troxel, D. E.

PY - 2004

Y1 - 2004

N2 - Accurate circuit-level reliability analyses can be based on experimental results for simple interconnect segments if interconnect trees, linked interconnect segments within one level of metallization, are used as fundamental reliability units. The reliability behavior of both segments and trees is different for Al and Cu. A revised method is proposed for tree-based circuit-level reliability analyses for Cu. The types of additional experimental data that would allow assessments with improved accuracy are outlined.

AB - Accurate circuit-level reliability analyses can be based on experimental results for simple interconnect segments if interconnect trees, linked interconnect segments within one level of metallization, are used as fundamental reliability units. The reliability behavior of both segments and trees is different for Al and Cu. A revised method is proposed for tree-based circuit-level reliability analyses for Cu. The types of additional experimental data that would allow assessments with improved accuracy are outlined.

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M3 - Conference contribution

AN - SCOPUS:8644263229

SN - 0780383087

T3 - Proceedings of the IEEE 2004 International Interconnect Technology Conference

SP - 69

EP - 71

BT - Proceedings of the IEEE 2004 International Interconnect Technology Conference

T2 - Proceedings of the IEEE 2004 International Interconnect Technology Conference

Y2 - 7 June 2004 through 9 June 2004

ER -

Experiments and models for circuit-level assessment of the reliability of Cu metallization

Abstract

Publication series

Conference

ASJC Scopus Subject Areas

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