Fabrication and characterization of Cu2ZnSn(S, Se)4 with aluminum doping by spray pyrolysis followed by selenization

Wei Chih Huang; Xin Zeng; Shih Yuan Wei; Chung Hao Cai; Tzu Ying Lin; Lydia Helena Wong; Chih Huang Lai

doi:10.1109/PVSC.2015.7356366

Fabrication and characterization of Cu2ZnSn(S, Se)4 with aluminum doping by spray pyrolysis followed by selenization

Wei Chih Huang, Xin Zeng, Shih Yuan Wei, Chung Hao Cai, Tzu Ying Lin, Lydia Helena Wong, Chih Huang Lai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

Spray pyrolysis is a simple way to fabricate CZTSSe and has potential for low-cost industrial manufacturing. Doping of elements can be easily conducted using spray pyrolysis by addition of dopant salts into solution. Aluminum doping in CZTSSe might be an alternative way to adjust bandgap for application to tandem cell or bandgap grading. In this paper, we demonstrate the Al-doing of CZTSSe by spray pyrolysis. Aluminum is introduced by adding AlCl3•6H2O into the precursor solution of CZTSSe. With aluminum in CZTSSe, the crystal structure remained kesterite, but c/a ratio is slightly changed. However, small grain layer was observed when aluminum was incorporated in this film, but this layer might be reduced by optimizing selenization condition.

Original language	English
Title of host publication	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479979448
DOIs	https://doi.org/10.1109/PVSC.2015.7356366
Publication status	Published - Dec 14 2015
Externally published	Yes
Event	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: Jun 14 2015 → Jun 19 2015

Publication series

Name	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

Conference

Conference	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/Territory	United States
City	New Orleans
Period	6/14/15 → 6/19/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

ASJC Scopus Subject Areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Keywords

aluminum doping
CZTSSe:Al
spray pyrolysis

Access to Document

10.1109/PVSC.2015.7356366

Cite this

Huang, W. C., Zeng, X., Wei, S. Y., Cai, C. H., Lin, T. Y., Wong, L. H., & Lai, C. H. (2015). Fabrication and characterization of Cu2ZnSn(S, Se)4 with aluminum doping by spray pyrolysis followed by selenization. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 Article 7356366 (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2015.7356366

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title = "Fabrication and characterization of Cu2ZnSn(S, Se)4 with aluminum doping by spray pyrolysis followed by selenization",

abstract = "Spray pyrolysis is a simple way to fabricate CZTSSe and has potential for low-cost industrial manufacturing. Doping of elements can be easily conducted using spray pyrolysis by addition of dopant salts into solution. Aluminum doping in CZTSSe might be an alternative way to adjust bandgap for application to tandem cell or bandgap grading. In this paper, we demonstrate the Al-doing of CZTSSe by spray pyrolysis. Aluminum is introduced by adding AlCl3•6H2O into the precursor solution of CZTSSe. With aluminum in CZTSSe, the crystal structure remained kesterite, but c/a ratio is slightly changed. However, small grain layer was observed when aluminum was incorporated in this film, but this layer might be reduced by optimizing selenization condition.",

keywords = "aluminum doping, CZTSSe:Al, spray pyrolysis",

author = "Huang, {Wei Chih} and Xin Zeng and Wei, {Shih Yuan} and Cai, {Chung Hao} and Lin, {Tzu Ying} and Wong, {Lydia Helena} and Lai, {Chih Huang}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 ; Conference date: 14-06-2015 Through 19-06-2015",

year = "2015",

month = dec,

day = "14",

doi = "10.1109/PVSC.2015.7356366",

language = "English",

series = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Huang, WC, Zeng, X, Wei, SY, Cai, CH, Lin, TY, Wong, LH & Lai, CH 2015, Fabrication and characterization of Cu2ZnSn(S, Se)4 with aluminum doping by spray pyrolysis followed by selenization. in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015., 7356366, 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015, Institute of Electrical and Electronics Engineers Inc., 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States, 6/14/15. https://doi.org/10.1109/PVSC.2015.7356366

Fabrication and characterization of Cu2ZnSn(S, Se)4 with aluminum doping by spray pyrolysis followed by selenization. / Huang, Wei Chih; Zeng, Xin; Wei, Shih Yuan et al.
2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7356366 (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Fabrication and characterization of Cu2ZnSn(S, Se)4 with aluminum doping by spray pyrolysis followed by selenization

AU - Huang, Wei Chih

AU - Zeng, Xin

AU - Wei, Shih Yuan

AU - Cai, Chung Hao

AU - Lin, Tzu Ying

AU - Wong, Lydia Helena

AU - Lai, Chih Huang

PY - 2015/12/14

Y1 - 2015/12/14

N2 - Spray pyrolysis is a simple way to fabricate CZTSSe and has potential for low-cost industrial manufacturing. Doping of elements can be easily conducted using spray pyrolysis by addition of dopant salts into solution. Aluminum doping in CZTSSe might be an alternative way to adjust bandgap for application to tandem cell or bandgap grading. In this paper, we demonstrate the Al-doing of CZTSSe by spray pyrolysis. Aluminum is introduced by adding AlCl3•6H2O into the precursor solution of CZTSSe. With aluminum in CZTSSe, the crystal structure remained kesterite, but c/a ratio is slightly changed. However, small grain layer was observed when aluminum was incorporated in this film, but this layer might be reduced by optimizing selenization condition.

AB - Spray pyrolysis is a simple way to fabricate CZTSSe and has potential for low-cost industrial manufacturing. Doping of elements can be easily conducted using spray pyrolysis by addition of dopant salts into solution. Aluminum doping in CZTSSe might be an alternative way to adjust bandgap for application to tandem cell or bandgap grading. In this paper, we demonstrate the Al-doing of CZTSSe by spray pyrolysis. Aluminum is introduced by adding AlCl3•6H2O into the precursor solution of CZTSSe. With aluminum in CZTSSe, the crystal structure remained kesterite, but c/a ratio is slightly changed. However, small grain layer was observed when aluminum was incorporated in this film, but this layer might be reduced by optimizing selenization condition.

KW - aluminum doping

KW - CZTSSe:Al

KW - spray pyrolysis

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BT - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015

Y2 - 14 June 2015 through 19 June 2015

ER -

Huang WC, Zeng X, Wei SY, Cai CH, Lin TY, Wong LH et al. Fabrication and characterization of Cu2ZnSn(S, Se)4 with aluminum doping by spray pyrolysis followed by selenization. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7356366. (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015). doi: 10.1109/PVSC.2015.7356366

Fabrication and characterization of Cu2ZnSn(S, Se)4 with aluminum doping by spray pyrolysis followed by selenization

Abstract

Publication series

Conference

Bibliographical note

ASJC Scopus Subject Areas

Keywords

Access to Document

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Cite this