Fabrication and characterization of networked graphene devices based on ultralarge single-layer graphene sheets

Xiaochen Dong; Wei Huang; Peng Chen

doi:10.1109/TNANO.2010.2047263

Fabrication and characterization of networked graphene devices based on ultralarge single-layer graphene sheets

Xiaochen Dong^*, Wei Huang, Peng Chen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Ultralarge-scale single-layer graphene (SLG) sheets are obtained by chemically reduction process in aqueous media. The resulting SLG sheets are investigated by atomic force microscopy (AFM), Raman spectroscopy, X-ray photoelectron spectroscopic. Based on the ultralarge SLG sheets, the graphene FETs are fabricated using SLG sheets and networked graphene (NW) sheets, respectively. The electrical characterizations indicate that the NW devices exhibit higher carrier mobility as compared to SLG devices. Moreover, the subsequent thermal annealing process further improves the effective hole mobility to 0.55 cm^-2 /Vs. This study demonstrates a simple way to obtain graphene transistors with high mobility, which provides a promising application in printable graphene-based nanoelectronics.

Original language	English
Article number	5443467
Pages (from-to)	467-471
Number of pages	5
Journal	IEEE Transactions on Nanotechnology
Volume	10
Issue number	3
DOIs	https://doi.org/10.1109/TNANO.2010.2047263
Publication status	Published - May 2011
Externally published	Yes

ASJC Scopus Subject Areas

Computer Science Applications
Electrical and Electronic Engineering

Keywords

FET
graphene oxide (GO)
single-layer graphene (SLG)

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10.1109/TNANO.2010.2047263

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abstract = "Ultralarge-scale single-layer graphene (SLG) sheets are obtained by chemically reduction process in aqueous media. The resulting SLG sheets are investigated by atomic force microscopy (AFM), Raman spectroscopy, X-ray photoelectron spectroscopic. Based on the ultralarge SLG sheets, the graphene FETs are fabricated using SLG sheets and networked graphene (NW) sheets, respectively. The electrical characterizations indicate that the NW devices exhibit higher carrier mobility as compared to SLG devices. Moreover, the subsequent thermal annealing process further improves the effective hole mobility to 0.55 cm-2 /Vs. This study demonstrates a simple way to obtain graphene transistors with high mobility, which provides a promising application in printable graphene-based nanoelectronics.",

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AU - Huang, Wei

AU - Chen, Peng

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Fabrication and characterization of networked graphene devices based on ultralarge single-layer graphene sheets

Abstract

ASJC Scopus Subject Areas

Keywords

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