Fabrication at wafer level of micromachined gas sensors based on Sno 2 nanorods deposited by PECVD and gas sensing characteristics

A. Forleo; L. Francioso; S. Capone; F. Casino; P. Siciliano; H. Huang; O. K. Tan

doi:10.1109/IWASI.2011.6004716

Fabrication at wafer level of micromachined gas sensors based on Sno ₂ nanorods deposited by PECVD and gas sensing characteristics

A. Forleo^*, L. Francioso, S. Capone, F. Casino, P. Siciliano, H. Huang, O. K. Tan

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

SnO₂ nanorods were successfully deposited on 3 Si/SiO ₂ wafers by inductively coupled plasma-enhanced chemical vapor deposition (PECVD) and a wafer-level patterning of nanorods layer for miniaturized solid state gas sensor fabrication were performed. Uniform needle-shape SnO₂ nanorods in situ grown were obtained under catalyst- and high temperature treatment-free growth condition. These nanorods have an average diameter between 5 and 15 nm and a length of 160 to 300 nm. The SnO₂-nanords based gas sensors were tested towards NH₃ and CH₃OH and gas sensing tests show remarkable response, showing promising and repeatable results compared with the SnO₂ thin films gas sensors.

Original language	English
Title of host publication	Proceedings of the 4th IEEE International Workshop on Advances in Sensors and Interfaces, IWASI 2011
Pages	196-198
Number of pages	3
DOIs	https://doi.org/10.1109/IWASI.2011.6004716
Publication status	Published - 2011
Externally published	Yes
Event	4th IEEE International Workshop on Advances in Sensors and Interfaces, IWASI 2011 - Savelletri di Fasano, Brindisi, Italy Duration: Jun 28 2011 → Jun 29 2011

Publication series

Name	Proceedings of the 4th IEEE International Workshop on Advances in Sensors and Interfaces, IWASI 2011

Conference

Conference	4th IEEE International Workshop on Advances in Sensors and Interfaces, IWASI 2011
Country/Territory	Italy
City	Savelletri di Fasano, Brindisi
Period	6/28/11 → 6/29/11

ASJC Scopus Subject Areas

Computer Networks and Communications
Human-Computer Interaction

Access to Document

10.1109/IWASI.2011.6004716

Cite this

Forleo, A., Francioso, L., Capone, S., Casino, F., Siciliano, P., Huang, H., & Tan, O. K. (2011). Fabrication at wafer level of micromachined gas sensors based on Sno ₂ nanorods deposited by PECVD and gas sensing characteristics. In Proceedings of the 4th IEEE International Workshop on Advances in Sensors and Interfaces, IWASI 2011 (pp. 196-198). Article 6004716 (Proceedings of the 4th IEEE International Workshop on Advances in Sensors and Interfaces, IWASI 2011). https://doi.org/10.1109/IWASI.2011.6004716

Forleo, A. ; Francioso, L. ; Capone, S. et al. / Fabrication at wafer level of micromachined gas sensors based on Sno ₂ nanorods deposited by PECVD and gas sensing characteristics. Proceedings of the 4th IEEE International Workshop on Advances in Sensors and Interfaces, IWASI 2011. 2011. pp. 196-198 (Proceedings of the 4th IEEE International Workshop on Advances in Sensors and Interfaces, IWASI 2011).

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title = "Fabrication at wafer level of micromachined gas sensors based on Sno 2 nanorods deposited by PECVD and gas sensing characteristics",

abstract = "SnO2 nanorods were successfully deposited on 3 Si/SiO 2 wafers by inductively coupled plasma-enhanced chemical vapor deposition (PECVD) and a wafer-level patterning of nanorods layer for miniaturized solid state gas sensor fabrication were performed. Uniform needle-shape SnO2 nanorods in situ grown were obtained under catalyst- and high temperature treatment-free growth condition. These nanorods have an average diameter between 5 and 15 nm and a length of 160 to 300 nm. The SnO2-nanords based gas sensors were tested towards NH3 and CH3OH and gas sensing tests show remarkable response, showing promising and repeatable results compared with the SnO2 thin films gas sensors.",

author = "A. Forleo and L. Francioso and S. Capone and F. Casino and P. Siciliano and H. Huang and Tan, {O. K.}",

year = "2011",

doi = "10.1109/IWASI.2011.6004716",

language = "English",

isbn = "9781457706226",

series = "Proceedings of the 4th IEEE International Workshop on Advances in Sensors and Interfaces, IWASI 2011",

pages = "196--198",

booktitle = "Proceedings of the 4th IEEE International Workshop on Advances in Sensors and Interfaces, IWASI 2011",

note = "4th IEEE International Workshop on Advances in Sensors and Interfaces, IWASI 2011 ; Conference date: 28-06-2011 Through 29-06-2011",

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Forleo, A, Francioso, L, Capone, S, Casino, F, Siciliano, P, Huang, H & Tan, OK 2011, Fabrication at wafer level of micromachined gas sensors based on Sno ₂ nanorods deposited by PECVD and gas sensing characteristics. in Proceedings of the 4th IEEE International Workshop on Advances in Sensors and Interfaces, IWASI 2011., 6004716, Proceedings of the 4th IEEE International Workshop on Advances in Sensors and Interfaces, IWASI 2011, pp. 196-198, 4th IEEE International Workshop on Advances in Sensors and Interfaces, IWASI 2011, Savelletri di Fasano, Brindisi, Italy, 6/28/11. https://doi.org/10.1109/IWASI.2011.6004716

Fabrication at wafer level of micromachined gas sensors based on Sno ₂ nanorods deposited by PECVD and gas sensing characteristics. / Forleo, A.; Francioso, L.; Capone, S. et al.
Proceedings of the 4th IEEE International Workshop on Advances in Sensors and Interfaces, IWASI 2011. 2011. p. 196-198 6004716 (Proceedings of the 4th IEEE International Workshop on Advances in Sensors and Interfaces, IWASI 2011).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Forleo, A.

AU - Francioso, L.

AU - Capone, S.

AU - Casino, F.

AU - Siciliano, P.

AU - Huang, H.

AU - Tan, O. K.

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AB - SnO2 nanorods were successfully deposited on 3 Si/SiO 2 wafers by inductively coupled plasma-enhanced chemical vapor deposition (PECVD) and a wafer-level patterning of nanorods layer for miniaturized solid state gas sensor fabrication were performed. Uniform needle-shape SnO2 nanorods in situ grown were obtained under catalyst- and high temperature treatment-free growth condition. These nanorods have an average diameter between 5 and 15 nm and a length of 160 to 300 nm. The SnO2-nanords based gas sensors were tested towards NH3 and CH3OH and gas sensing tests show remarkable response, showing promising and repeatable results compared with the SnO2 thin films gas sensors.

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BT - Proceedings of the 4th IEEE International Workshop on Advances in Sensors and Interfaces, IWASI 2011

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Forleo A, Francioso L, Capone S, Casino F, Siciliano P, Huang H et al. Fabrication at wafer level of micromachined gas sensors based on Sno ₂ nanorods deposited by PECVD and gas sensing characteristics. In Proceedings of the 4th IEEE International Workshop on Advances in Sensors and Interfaces, IWASI 2011. 2011. p. 196-198. 6004716. (Proceedings of the 4th IEEE International Workshop on Advances in Sensors and Interfaces, IWASI 2011). doi: 10.1109/IWASI.2011.6004716