Fabrication at wafer level of miniaturized gas sensors based on SnO 2 nanorods deposited by PECVD and gas sensing characteristics

A. Forleo; L. Francioso; S. Capone; F. Casino; P. Siciliano; O. K. Tan; H. Hui

doi:10.1016/j.snb.2010.01.010

Fabrication at wafer level of miniaturized gas sensors based on SnO ₂ nanorods deposited by PECVD and gas sensing characteristics

A. Forleo^*, L. Francioso, S. Capone, F. Casino, P. Siciliano, O. K. Tan, H. Hui

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

44 Citations (Scopus)

Abstract

SnO₂ nanorods were successfully deposited on 3″ Si/SiO₂ wafers by inductively coupled plasma-enhanced chemical vapour deposition (PECVD) and a wafer-level patterning of nanorods layer for miniaturized solid state gas sensor fabrication were performed. Uniform needle-shaped SnO₂ nanorods in situ grown were obtained under catalyst- and high temperature treatment-free growth condition. These nanorods have an average diameter between 5 and 15 nm and a length of 160-300 nm. The SnO₂-nanorods based gas sensors were tested towards NH₃ and CH₃OH and gas sensing tests show remarkable response, showing promising and repeatable results compared with the SnO₂ thin films gas sensors.

Original language	English
Pages (from-to)	283-287
Number of pages	5
Journal	Sensors and Actuators, B: Chemical
Volume	154
Issue number	2
DOIs	https://doi.org/10.1016/j.snb.2010.01.010
Publication status	Published - Jun 20 2011
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

Keywords

Gas sensors
Nanorods
Plasma-enhanced chemical vapour deposition (PECVD)
SnO

Access to Document

10.1016/j.snb.2010.01.010

Cite this

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title = "Fabrication at wafer level of miniaturized gas sensors based on SnO 2 nanorods deposited by PECVD and gas sensing characteristics",

abstract = "SnO2 nanorods were successfully deposited on 3″ Si/SiO2 wafers by inductively coupled plasma-enhanced chemical vapour deposition (PECVD) and a wafer-level patterning of nanorods layer for miniaturized solid state gas sensor fabrication were performed. Uniform needle-shaped SnO2 nanorods in situ grown were obtained under catalyst- and high temperature treatment-free growth condition. These nanorods have an average diameter between 5 and 15 nm and a length of 160-300 nm. The SnO2-nanorods based gas sensors were tested towards NH3 and CH3OH and gas sensing tests show remarkable response, showing promising and repeatable results compared with the SnO2 thin films gas sensors.",

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AU - Forleo, A.

AU - Francioso, L.

AU - Capone, S.

AU - Casino, F.

AU - Siciliano, P.

AU - Tan, O. K.

AU - Hui, H.

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