Fabrication of a low-operating voltage diamond thin film metal-semiconductor-metal photodetector by laser writing lithography

Wei Jiang; Jaeshin Ahn; Feng Lan Xu; Chin Yi Liaw; Yuen Chuen Chan; Yan Zhou; Yee Loy Lam

doi:10.1063/1.120992

Fabrication of a low-operating voltage diamond thin film metal-semiconductor-metal photodetector by laser writing lithography

Wei Jiang^*, Jaeshin Ahn, Feng Lan Xu, Chin Yi Liaw, Yuen Chuen Chan, Yan Zhou, Yee Loy Lam

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

An ultraviolet-sensitive photodetector based on the metal-semiconductor-metal structure has been fabricated on a chemical-vapor-deposited diamond thin film grown on a silicon substrate. Device processing techniques employed include maskless laser writing lithography, image reversal processing and sacrificial layer inclusion, which resulted in devices with an electrode finger separation of only 2.5 μm. This allows for a low operating voltage of only 5 V, which is very much lower than what has been achieved so far.

Original language	English
Pages (from-to)	1131-1133
Number of pages	3
Journal	Applied Physics Letters
Volume	72
Issue number	10
DOIs	https://doi.org/10.1063/1.120992
Publication status	Published - 1998
Externally published	Yes

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.120992

Cite this

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title = "Fabrication of a low-operating voltage diamond thin film metal-semiconductor-metal photodetector by laser writing lithography",

abstract = "An ultraviolet-sensitive photodetector based on the metal-semiconductor-metal structure has been fabricated on a chemical-vapor-deposited diamond thin film grown on a silicon substrate. Device processing techniques employed include maskless laser writing lithography, image reversal processing and sacrificial layer inclusion, which resulted in devices with an electrode finger separation of only 2.5 μm. This allows for a low operating voltage of only 5 V, which is very much lower than what has been achieved so far.",

author = "Wei Jiang and Jaeshin Ahn and Xu, {Feng Lan} and Liaw, {Chin Yi} and Chan, {Yuen Chuen} and Yan Zhou and Lam, {Yee Loy}",

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volume = "72",

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AU - Jiang, Wei

AU - Ahn, Jaeshin

AU - Xu, Feng Lan

AU - Liaw, Chin Yi

AU - Chan, Yuen Chuen

AU - Zhou, Yan

AU - Lam, Yee Loy

PY - 1998

Y1 - 1998

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AB - An ultraviolet-sensitive photodetector based on the metal-semiconductor-metal structure has been fabricated on a chemical-vapor-deposited diamond thin film grown on a silicon substrate. Device processing techniques employed include maskless laser writing lithography, image reversal processing and sacrificial layer inclusion, which resulted in devices with an electrode finger separation of only 2.5 μm. This allows for a low operating voltage of only 5 V, which is very much lower than what has been achieved so far.

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Fabrication of a low-operating voltage diamond thin film metal-semiconductor-metal photodetector by laser writing lithography

Abstract

ASJC Scopus Subject Areas

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