Fabrication of carbon nanotube field effect transistors with OCMC dispersed single-walled carbon nanotubes

Kumar Raj; Qing Zhang; Liangyu Yan; Mary B.Chan Park

doi:10.1142/S0219581X10006995

Fabrication of carbon nanotube field effect transistors with OCMC dispersed single-walled carbon nanotubes

Kumar Raj, Qing Zhang^*, Liangyu Yan, Mary B.Chan Park

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

Abstract

We report on the fabrication of carbon nanotube field effect transistors (CNTFETs) from dispersed single-walled CNTs using OCMC (O-Carboxymethylchitosan) as the surfactant. The as-prepared devices exhibit p-type as well as ambipolar characteristics due to oxygen adsorption at the metal/nanotube contacts. The Raman scattering from the SWCNTs shows that OCMC disperses CNTs efficiently. Rapid thermal annealing (RTA) at 400°C for 5 min is found to partially remove OCMC from the surface of SWCNTs.

Original language	English
Pages (from-to)	377-381
Number of pages	5
Journal	International Journal of Nanoscience
Volume	9
Issue number	4
DOIs	https://doi.org/10.1142/S0219581X10006995
Publication status	Published - Aug 2010
Externally published	Yes

ASJC Scopus Subject Areas

Biotechnology
Bioengineering
General Materials Science
Condensed Matter Physics
Computer Science Applications
Electrical and Electronic Engineering

Keywords

ambipolar behavior
Carbon nanotubes
Fermi level
OCMC polymer
Raman spectroscopy

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10.1142/S0219581X10006995

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title = "Fabrication of carbon nanotube field effect transistors with OCMC dispersed single-walled carbon nanotubes",

abstract = "We report on the fabrication of carbon nanotube field effect transistors (CNTFETs) from dispersed single-walled CNTs using OCMC (O-Carboxymethylchitosan) as the surfactant. The as-prepared devices exhibit p-type as well as ambipolar characteristics due to oxygen adsorption at the metal/nanotube contacts. The Raman scattering from the SWCNTs shows that OCMC disperses CNTs efficiently. Rapid thermal annealing (RTA) at 400°C for 5 min is found to partially remove OCMC from the surface of SWCNTs.",

keywords = "ambipolar behavior, Carbon nanotubes, Fermi level, OCMC polymer, Raman spectroscopy",

author = "Kumar Raj and Qing Zhang and Liangyu Yan and Park, {Mary B.Chan}",

year = "2010",

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T1 - Fabrication of carbon nanotube field effect transistors with OCMC dispersed single-walled carbon nanotubes

AU - Raj, Kumar

AU - Zhang, Qing

AU - Yan, Liangyu

AU - Park, Mary B.Chan

PY - 2010/8

Y1 - 2010/8

N2 - We report on the fabrication of carbon nanotube field effect transistors (CNTFETs) from dispersed single-walled CNTs using OCMC (O-Carboxymethylchitosan) as the surfactant. The as-prepared devices exhibit p-type as well as ambipolar characteristics due to oxygen adsorption at the metal/nanotube contacts. The Raman scattering from the SWCNTs shows that OCMC disperses CNTs efficiently. Rapid thermal annealing (RTA) at 400°C for 5 min is found to partially remove OCMC from the surface of SWCNTs.

AB - We report on the fabrication of carbon nanotube field effect transistors (CNTFETs) from dispersed single-walled CNTs using OCMC (O-Carboxymethylchitosan) as the surfactant. The as-prepared devices exhibit p-type as well as ambipolar characteristics due to oxygen adsorption at the metal/nanotube contacts. The Raman scattering from the SWCNTs shows that OCMC disperses CNTs efficiently. Rapid thermal annealing (RTA) at 400°C for 5 min is found to partially remove OCMC from the surface of SWCNTs.

KW - ambipolar behavior

KW - Carbon nanotubes

KW - Fermi level

KW - OCMC polymer

KW - Raman spectroscopy

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SP - 377

EP - 381

JO - International Journal of Nanoscience

JF - International Journal of Nanoscience

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Fabrication of carbon nanotube field effect transistors with OCMC dispersed single-walled carbon nanotubes

Abstract

ASJC Scopus Subject Areas

Keywords

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