TY - GEN
T1 - Facile fabrication of Si nanowires arrays for solar cell applications
AU - Li, Xiaocheng
AU - Tay, Beng Kang
PY - 2010
Y1 - 2010
N2 - Large-area of Si nanowires (SiNWs) has been fabricated on Si surface by a facile silver-catalyzed chemical etching process. The solar cell incorporated with SiNWs arrays shows a high power conversion efficiency of 6.69% with an open circuit voltage of 558 mV and short circuit current density of 25.13 mA/cm 2 without using any extra antireflection layer and surface passivation technique. The high conversion efficiency of the solar cell is attributed to the low reflective index of SiNWs for the incident sunlight. Optimization of electrical contact and phosphorus diffusion process will be critical to improve the performance of SiNWs based solar cell in the future.
AB - Large-area of Si nanowires (SiNWs) has been fabricated on Si surface by a facile silver-catalyzed chemical etching process. The solar cell incorporated with SiNWs arrays shows a high power conversion efficiency of 6.69% with an open circuit voltage of 558 mV and short circuit current density of 25.13 mA/cm 2 without using any extra antireflection layer and surface passivation technique. The high conversion efficiency of the solar cell is attributed to the low reflective index of SiNWs for the incident sunlight. Optimization of electrical contact and phosphorus diffusion process will be critical to improve the performance of SiNWs based solar cell in the future.
UR - http://www.scopus.com/inward/record.url?scp=77951664101&partnerID=8YFLogxK
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U2 - 10.1109/INEC.2010.5424740
DO - 10.1109/INEC.2010.5424740
M3 - Conference contribution
AN - SCOPUS:77951664101
SN - 9781424435449
T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
SP - 612
EP - 613
BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
T2 - 2010 3rd International Nanoelectronics Conference, INEC 2010
Y2 - 3 January 2010 through 8 January 2010
ER -