Failure analysis of damages on advanced technologies induced by picosecond pulsed laser during space radiation see testing

C. T. Chua; Q. Liu; S. Chef; K. Sanchez; P. Pcrdu; C. L. Gan

doi:10.1109/IPFA.2018.8452544

Failure analysis of damages on advanced technologies induced by picosecond pulsed laser during space radiation see testing

C. T. Chua, Q. Liu, S. Chef, K. Sanchez, P. Pcrdu, C. L. Gan

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Picosecond pulsed laser, customarily perceived to offer advantages of flexibility and ease of testing over heavy ion particle accelerator test, was conducted on a chain of inverters during Single Event Effect (SEE) evaluation. In this paper, we report on the unexpected permanent damage induced by 1064 nm pulsed laser on test structures fabricated with 65 nm bulk CMOS process technology. Light emission microscopy (EMMI) localized hotspots within the area previously scanned by the pulsed laser. Electro Optical Frequency Mapping (EOFM) verified the undesired termination of signal propagation along the chain of inverters while Electro Optical Probing (EOP) confirmed the unexpected phase change and eventual loss of the output signal waveform. Focused Ion Beam (FIB), Transmission Microscopy (TEM) and Energy Dispersive X-ray spectroscopy (EDX) confirmed the physical failure and identified nickel as the diffusing species. This paper aims to advise caution to the research communities (both space radiation and optical failure analysis) in employing similar laser test technique and highlights the need to define the safe operating region of such technique, especially for emerging technology nodes.

Original language	English
Title of host publication	IPFA 2018 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781538649299
DOIs	https://doi.org/10.1109/IPFA.2018.8452544
Publication status	Published - Aug 30 2018
Externally published	Yes
Event	25th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2018 - Singapore, Singapore Duration: Jul 16 2018 → Jul 19 2018

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume	2018-July

Conference

Conference	25th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2018
Country/Territory	Singapore
City	Singapore
Period	7/16/18 → 7/19/18

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

ASJC Scopus Subject Areas

Electrical and Electronic Engineering

Keywords

1064 nm
65 nm
FIB
laser damage
optical failure analysis
Pulsed laser
SEE
TEM

Access to Document

10.1109/IPFA.2018.8452544

Cite this

Chua, C. T., Liu, Q., Chef, S., Sanchez, K., Pcrdu, P., & Gan, C. L. (2018). Failure analysis of damages on advanced technologies induced by picosecond pulsed laser during space radiation see testing. In IPFA 2018 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits Article 8452544 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2018-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPFA.2018.8452544

Chua, C. T. ; Liu, Q. ; Chef, S. et al. / Failure analysis of damages on advanced technologies induced by picosecond pulsed laser during space radiation see testing. IPFA 2018 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits. Institute of Electrical and Electronics Engineers Inc., 2018. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

@inproceedings{c593b94aa8a440e28d242bd9fa31b2d4,

title = "Failure analysis of damages on advanced technologies induced by picosecond pulsed laser during space radiation see testing",

abstract = "Picosecond pulsed laser, customarily perceived to offer advantages of flexibility and ease of testing over heavy ion particle accelerator test, was conducted on a chain of inverters during Single Event Effect (SEE) evaluation. In this paper, we report on the unexpected permanent damage induced by 1064 nm pulsed laser on test structures fabricated with 65 nm bulk CMOS process technology. Light emission microscopy (EMMI) localized hotspots within the area previously scanned by the pulsed laser. Electro Optical Frequency Mapping (EOFM) verified the undesired termination of signal propagation along the chain of inverters while Electro Optical Probing (EOP) confirmed the unexpected phase change and eventual loss of the output signal waveform. Focused Ion Beam (FIB), Transmission Microscopy (TEM) and Energy Dispersive X-ray spectroscopy (EDX) confirmed the physical failure and identified nickel as the diffusing species. This paper aims to advise caution to the research communities (both space radiation and optical failure analysis) in employing similar laser test technique and highlights the need to define the safe operating region of such technique, especially for emerging technology nodes.",

keywords = "1064 nm, 65 nm, FIB, laser damage, optical failure analysis, Pulsed laser, SEE, TEM",

author = "Chua, {C. T.} and Q. Liu and S. Chef and K. Sanchez and P. Pcrdu and Gan, {C. L.}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2018 ; Conference date: 16-07-2018 Through 19-07-2018",

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Chua, CT, Liu, Q, Chef, S, Sanchez, K, Pcrdu, P & Gan, CL 2018, Failure analysis of damages on advanced technologies induced by picosecond pulsed laser during space radiation see testing. in IPFA 2018 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits., 8452544, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, vol. 2018-July, Institute of Electrical and Electronics Engineers Inc., 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2018, Singapore, Singapore, 7/16/18. https://doi.org/10.1109/IPFA.2018.8452544

Failure analysis of damages on advanced technologies induced by picosecond pulsed laser during space radiation see testing. / Chua, C. T.; Liu, Q.; Chef, S. et al.
IPFA 2018 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits. Institute of Electrical and Electronics Engineers Inc., 2018. 8452544 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2018-July).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Chef, S.

AU - Sanchez, K.

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AU - Gan, C. L.

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N2 - Picosecond pulsed laser, customarily perceived to offer advantages of flexibility and ease of testing over heavy ion particle accelerator test, was conducted on a chain of inverters during Single Event Effect (SEE) evaluation. In this paper, we report on the unexpected permanent damage induced by 1064 nm pulsed laser on test structures fabricated with 65 nm bulk CMOS process technology. Light emission microscopy (EMMI) localized hotspots within the area previously scanned by the pulsed laser. Electro Optical Frequency Mapping (EOFM) verified the undesired termination of signal propagation along the chain of inverters while Electro Optical Probing (EOP) confirmed the unexpected phase change and eventual loss of the output signal waveform. Focused Ion Beam (FIB), Transmission Microscopy (TEM) and Energy Dispersive X-ray spectroscopy (EDX) confirmed the physical failure and identified nickel as the diffusing species. This paper aims to advise caution to the research communities (both space radiation and optical failure analysis) in employing similar laser test technique and highlights the need to define the safe operating region of such technique, especially for emerging technology nodes.

AB - Picosecond pulsed laser, customarily perceived to offer advantages of flexibility and ease of testing over heavy ion particle accelerator test, was conducted on a chain of inverters during Single Event Effect (SEE) evaluation. In this paper, we report on the unexpected permanent damage induced by 1064 nm pulsed laser on test structures fabricated with 65 nm bulk CMOS process technology. Light emission microscopy (EMMI) localized hotspots within the area previously scanned by the pulsed laser. Electro Optical Frequency Mapping (EOFM) verified the undesired termination of signal propagation along the chain of inverters while Electro Optical Probing (EOP) confirmed the unexpected phase change and eventual loss of the output signal waveform. Focused Ion Beam (FIB), Transmission Microscopy (TEM) and Energy Dispersive X-ray spectroscopy (EDX) confirmed the physical failure and identified nickel as the diffusing species. This paper aims to advise caution to the research communities (both space radiation and optical failure analysis) in employing similar laser test technique and highlights the need to define the safe operating region of such technique, especially for emerging technology nodes.

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Chua CT, Liu Q, Chef S, Sanchez K, Pcrdu P, Gan CL. Failure analysis of damages on advanced technologies induced by picosecond pulsed laser during space radiation see testing. In IPFA 2018 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits. Institute of Electrical and Electronics Engineers Inc. 2018. 8452544. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2018.8452544

Failure analysis of damages on advanced technologies induced by picosecond pulsed laser during space radiation see testing

Abstract

Publication series

Conference

Bibliographical note

ASJC Scopus Subject Areas

Keywords

Access to Document

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