TY - JOUR
T1 - Ferroelectric (Ba0.67Sr0.33)Ti1.02O3 thin film H2 gas sensor by sol-gel deposition technology
AU - Zhu, W.
AU - Tan, O. K.
AU - Tse, M. S.
AU - Yao, X.
PY - 1998
Y1 - 1998
N2 - Ferroelectric (Ba0.67Sr0.33)Ti1.02O3 thin films have been prepared by the sol-gel technology and characterized using thermogravimetric analysis (TGA), differential thermal analysis (DTA), X-ray diffraction, atomic force microscopy (AFM), dielectric characterizations, and gas sensing measurements. These (Ba0.67Sr0.33)Ti1.02O3 thin film gas sensors are made on Si substrates to detect hydrogen and related hazardous gases. In such a metal-ferroelectric-metal-silicon (MFMS) structured H2 gas sensor, dissociated hydrogen H+ ions are accumulated at the metal-ferroelectric BaTiO3 interface, as a result, a dipolar potential is built up in the device. The high dielectric constant of (Ba0.67Sr0.33)Ti1.02O3 thin films enhances the induced charge at the interface, thus greatly improves the sensitivity of H2 gas detection. Experimental results clearly show that the H2 gas sensing properties of these ferroelectric thin film gas sensors are closely correlated with their microstructure and the gas sensitivity to hydrogen at 1000 ppm as high as 10 has been obtained, indicating great promise to fabricate large-scale, Si based ferroelectric gas sensors. Based on our best knowledge, it is the first time in the literature to report this type of ferroelectric thin film device for the hydrogen gas sensor application.
AB - Ferroelectric (Ba0.67Sr0.33)Ti1.02O3 thin films have been prepared by the sol-gel technology and characterized using thermogravimetric analysis (TGA), differential thermal analysis (DTA), X-ray diffraction, atomic force microscopy (AFM), dielectric characterizations, and gas sensing measurements. These (Ba0.67Sr0.33)Ti1.02O3 thin film gas sensors are made on Si substrates to detect hydrogen and related hazardous gases. In such a metal-ferroelectric-metal-silicon (MFMS) structured H2 gas sensor, dissociated hydrogen H+ ions are accumulated at the metal-ferroelectric BaTiO3 interface, as a result, a dipolar potential is built up in the device. The high dielectric constant of (Ba0.67Sr0.33)Ti1.02O3 thin films enhances the induced charge at the interface, thus greatly improves the sensitivity of H2 gas detection. Experimental results clearly show that the H2 gas sensing properties of these ferroelectric thin film gas sensors are closely correlated with their microstructure and the gas sensitivity to hydrogen at 1000 ppm as high as 10 has been obtained, indicating great promise to fabricate large-scale, Si based ferroelectric gas sensors. Based on our best knowledge, it is the first time in the literature to report this type of ferroelectric thin film device for the hydrogen gas sensor application.
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M3 - Article
AN - SCOPUS:0032396761
SN - 0374-4884
VL - 32
SP - S1778-S1780
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
IS - 4 SUPPL.
ER -