@inproceedings{848191353a344d6ab21b6f4619384640,
title = "Ferroelectric copolymer P(VDF-TrFE) as gate dielectric in organic field effect transistors for memory application devices",
abstract = "Fabrication of ferroelectric memory field effect transistor (FEMFET) is presented with copolymer P(VDF-TrFE) as gate dielectric. Spin-coated copolymer film has semicrystalline structure after annealing, in which the crystallites contains ferroelectric and paraelectric phase. Dipolar alignment in ferroelectric phase is controlled with the sweeping of transistor gate bias. Ferroelectric remanent polarization enables current retention in the transistor during OFF state that can be used in non-volatile memory application.",
keywords = "FEMFET, Ferroelectric polymer, P(VDF-TRFE)",
author = "Nguyen, {A. C.} and Lee, {P. S.}",
year = "2006",
doi = "10.1109/NANOEL.2006.1609707",
language = "English",
isbn = "0780393589",
series = "NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings",
pages = "179--182",
booktitle = "NanoSingapore 2006",
note = "2006 IEEE Conference on Emerging Technologies - Nanoelectronics ; Conference date: 10-01-2006 Through 13-01-2006",
}