Ferroelectric thin-film devices: Failure mechanisms and new prototype nano-structures

J. F. Scott; F. D. Morrison; Y. K. Hoo; A. D. Milliken; H. J. Fan; S. Kawasaki; M. Miyake; T. Tatsuta; O. Tsuji

doi:10.1109/ISAF.2007.4393150

Ferroelectric thin-film devices: Failure mechanisms and new prototype nano-structures

J. F. Scott, F. D. Morrison, Y. K. Hoo, A. D. Milliken, H. J. Fan, S. Kawasaki, M. Miyake, T. Tatsuta, O. Tsuji

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Several fundamental physics problems concerning ferroelectric thin films are discussed with direct application to industry problems. The first is a model of dielectric breakdown under d.c. voltage stressing, extended from single capacitor films to multilayer capacitors (MLCs). The second is an analysis of flash-over (arcing) breakdown in MLCs, including those with base metal electrodes (Ni). The third is the demonstration that any equivalent circuit model for real ferroelectric memories (FRAMs) must include a constant phase element (CPE). We then consider novel new prototype devices with industry potential for commercialization: three-dimensional [3D] DRAM capacitor trenches; piezoelectric nanotubes; and carbon nano-wire arrays with ferroelectric tips.

Original language	English
Title of host publication	2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
Pages	5-8
Number of pages	4
DOIs	https://doi.org/10.1109/ISAF.2007.4393150
Publication status	Published - 2007
Externally published	Yes
Event	2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF - Nara-city, Japan Duration: May 27 2007 → May 31 2007

Publication series

Name	IEEE International Symposium on Applications of Ferroelectrics

Conference

Conference	2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
Country/Territory	Japan
City	Nara-city
Period	5/27/07 → 5/31/07

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/ISAF.2007.4393150

Cite this

Scott, J. F., Morrison, F. D., Hoo, Y. K., Milliken, A. D., Fan, H. J., Kawasaki, S., Miyake, M., Tatsuta, T., & Tsuji, O. (2007). Ferroelectric thin-film devices: Failure mechanisms and new prototype nano-structures. In 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF (pp. 5-8). Article 4393150 (IEEE International Symposium on Applications of Ferroelectrics). https://doi.org/10.1109/ISAF.2007.4393150

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title = "Ferroelectric thin-film devices: Failure mechanisms and new prototype nano-structures",

abstract = "Several fundamental physics problems concerning ferroelectric thin films are discussed with direct application to industry problems. The first is a model of dielectric breakdown under d.c. voltage stressing, extended from single capacitor films to multilayer capacitors (MLCs). The second is an analysis of flash-over (arcing) breakdown in MLCs, including those with base metal electrodes (Ni). The third is the demonstration that any equivalent circuit model for real ferroelectric memories (FRAMs) must include a constant phase element (CPE). We then consider novel new prototype devices with industry potential for commercialization: three-dimensional [3D] DRAM capacitor trenches; piezoelectric nanotubes; and carbon nano-wire arrays with ferroelectric tips.",

author = "Scott, {J. F.} and Morrison, {F. D.} and Hoo, {Y. K.} and Milliken, {A. D.} and Fan, {H. J.} and S. Kawasaki and M. Miyake and T. Tatsuta and O. Tsuji",

year = "2007",

doi = "10.1109/ISAF.2007.4393150",

language = "English",

isbn = "1424413338",

series = "IEEE International Symposium on Applications of Ferroelectrics",

pages = "5--8",

booktitle = "2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF",

note = "2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF ; Conference date: 27-05-2007 Through 31-05-2007",

}

Scott, JF, Morrison, FD, Hoo, YK, Milliken, AD, Fan, HJ, Kawasaki, S, Miyake, M, Tatsuta, T & Tsuji, O 2007, Ferroelectric thin-film devices: Failure mechanisms and new prototype nano-structures. in 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF., 4393150, IEEE International Symposium on Applications of Ferroelectrics, pp. 5-8, 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF, Nara-city, Japan, 5/27/07. https://doi.org/10.1109/ISAF.2007.4393150

Ferroelectric thin-film devices: Failure mechanisms and new prototype nano-structures. / Scott, J. F.; Morrison, F. D.; Hoo, Y. K. et al.
2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF. 2007. p. 5-8 4393150 (IEEE International Symposium on Applications of Ferroelectrics).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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Ferroelectric thin-film devices: Failure mechanisms and new prototype nano-structures

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