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Ferroelectric transistors with nanowire channel: Toward nonvolatile memory applications
L. Liao, H. J. Fan, B. Yan, Z. Zhang, L. L. Chen, B. S. Li, G. Z. Xing, Z. X. Shen, T. Wu, X. W. Sun, J. Wang, T. Yu*
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
94
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(Scopus)