Ferroelectric tunnel junction memory devices made from monolayers of vinylidene fluoride oligomers

Damar Yoga Kusuma; Pooi See Lee

doi:10.1002/adma.201104476

Ferroelectric tunnel junction memory devices made from monolayers of vinylidene fluoride oligomers

Damar Yoga Kusuma, Pooi See Lee^*

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

42 Citations (Scopus)

Abstract

Conductance bistability in Pt/Si-vinylidene fluoride (VDF) oligomer-Au ferroelectric tunnel junction devices is demonstrated. I-V and C-V measurements reveal bistable conductance switching within biasing voltage of ±0.5V with stable memory retention up to 1 × 10⁴ cycles. The memory element exhibits a low switching voltage of ±1.0 V, coincides with the coercive field of the ferroelectric VDF oligomer monolayer films in use.

Original language	English
Pages (from-to)	4163-4169
Number of pages	7
Journal	Advanced Materials
Volume	24
Issue number	30
DOIs	https://doi.org/10.1002/adma.201104476
Publication status	Published - Aug 8 2012
Externally published	Yes

ASJC Scopus Subject Areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

Keywords

memory device
monolayer film
organic ferroelectric
resistive switching
VDF oligomer

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10.1002/adma.201104476

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@article{d6682b47c76647188a8415005fb9a30e,

title = "Ferroelectric tunnel junction memory devices made from monolayers of vinylidene fluoride oligomers",

abstract = "Conductance bistability in Pt/Si-vinylidene fluoride (VDF) oligomer-Au ferroelectric tunnel junction devices is demonstrated. I-V and C-V measurements reveal bistable conductance switching within biasing voltage of ±0.5V with stable memory retention up to 1 × 104 cycles. The memory element exhibits a low switching voltage of ±1.0 V, coincides with the coercive field of the ferroelectric VDF oligomer monolayer films in use.",

keywords = "memory device, monolayer film, organic ferroelectric, resistive switching, VDF oligomer",

author = "Kusuma, \{Damar Yoga\} and Lee, \{Pooi See\}",

year = "2012",

month = aug,

day = "8",

doi = "10.1002/adma.201104476",

language = "English",

volume = "24",

pages = "4163--4169",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-VCH Verlag",

number = "30",

}

TY - JOUR

T1 - Ferroelectric tunnel junction memory devices made from monolayers of vinylidene fluoride oligomers

AU - Kusuma, Damar Yoga

AU - Lee, Pooi See

PY - 2012/8/8

Y1 - 2012/8/8

N2 - Conductance bistability in Pt/Si-vinylidene fluoride (VDF) oligomer-Au ferroelectric tunnel junction devices is demonstrated. I-V and C-V measurements reveal bistable conductance switching within biasing voltage of ±0.5V with stable memory retention up to 1 × 104 cycles. The memory element exhibits a low switching voltage of ±1.0 V, coincides with the coercive field of the ferroelectric VDF oligomer monolayer films in use.

AB - Conductance bistability in Pt/Si-vinylidene fluoride (VDF) oligomer-Au ferroelectric tunnel junction devices is demonstrated. I-V and C-V measurements reveal bistable conductance switching within biasing voltage of ±0.5V with stable memory retention up to 1 × 104 cycles. The memory element exhibits a low switching voltage of ±1.0 V, coincides with the coercive field of the ferroelectric VDF oligomer monolayer films in use.

KW - memory device

KW - monolayer film

KW - organic ferroelectric

KW - resistive switching

KW - VDF oligomer

UR - http://www.scopus.com/inward/record.url?scp=84864579264&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84864579264&partnerID=8YFLogxK

U2 - 10.1002/adma.201104476

DO - 10.1002/adma.201104476

M3 - Article

C2 - 22641351

AN - SCOPUS:84864579264

SN - 0935-9648

VL - 24

SP - 4163

EP - 4169

JO - Advanced Materials

JF - Advanced Materials

IS - 30

ER -

Ferroelectric tunnel junction memory devices made from monolayers of vinylidene fluoride oligomers

Abstract

ASJC Scopus Subject Areas

Keywords

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