Ferroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin films

Zhen Fan; Juanxiu Xiao; Jingxian Wang; Lei Zhang; Jinyu Deng; Ziyan Liu; Zhili Dong; John Wang; Jingsheng Chen

doi:10.1063/1.4953461

Ferroelectricity and ferroelectric resistive switching in sputtered Hf_0.5Zr_0.5O₂ thin films

Zhen Fan^*, Juanxiu Xiao, Jingxian Wang, Lei Zhang, Jinyu Deng, Ziyan Liu, Zhili Dong, John Wang, Jingsheng Chen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

65 Citations (Scopus)

Abstract

Ferroelectric properties and ferroelectric resistive switching (FE-RS) of sputtered Hf_0.5Zr_0.5O₂ (HZO) thin films were investigated. The HZO films with the orthorhombic phase were obtained without capping or post-deposition annealing. Ferroelectricity was demonstrated by polarization-voltage (P-V) hysteresis loops measured in a positive-up negative-down manner and piezoresponse force microscopy. However, defects such as oxygen vacancies caused the films to become leaky. The observed ferroelectricity and semiconducting characteristics led to the FE-RS effect. The FE-RS effect may be explained by a polarization modulated trap-assisted tunneling model. Our study not only provides a facile route to develop ferroelectric HfO₂-based thin films but also explores their potential applications in FE-RS memories.

Original language	English
Article number	232905
Journal	Applied Physics Letters
Volume	108
Issue number	23
DOIs	https://doi.org/10.1063/1.4953461
Publication status	Published - Jun 6 2016
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2016 Author(s).

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4953461

Cite this

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title = "Ferroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin films",

abstract = "Ferroelectric properties and ferroelectric resistive switching (FE-RS) of sputtered Hf0.5Zr0.5O2 (HZO) thin films were investigated. The HZO films with the orthorhombic phase were obtained without capping or post-deposition annealing. Ferroelectricity was demonstrated by polarization-voltage (P-V) hysteresis loops measured in a positive-up negative-down manner and piezoresponse force microscopy. However, defects such as oxygen vacancies caused the films to become leaky. The observed ferroelectricity and semiconducting characteristics led to the FE-RS effect. The FE-RS effect may be explained by a polarization modulated trap-assisted tunneling model. Our study not only provides a facile route to develop ferroelectric HfO2-based thin films but also explores their potential applications in FE-RS memories.",

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T1 - Ferroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin films

AU - Fan, Zhen

AU - Xiao, Juanxiu

AU - Wang, Jingxian

AU - Zhang, Lei

AU - Deng, Jinyu

AU - Liu, Ziyan

AU - Dong, Zhili

AU - Wang, John

AU - Chen, Jingsheng

PY - 2016/6/6

Y1 - 2016/6/6

N2 - Ferroelectric properties and ferroelectric resistive switching (FE-RS) of sputtered Hf0.5Zr0.5O2 (HZO) thin films were investigated. The HZO films with the orthorhombic phase were obtained without capping or post-deposition annealing. Ferroelectricity was demonstrated by polarization-voltage (P-V) hysteresis loops measured in a positive-up negative-down manner and piezoresponse force microscopy. However, defects such as oxygen vacancies caused the films to become leaky. The observed ferroelectricity and semiconducting characteristics led to the FE-RS effect. The FE-RS effect may be explained by a polarization modulated trap-assisted tunneling model. Our study not only provides a facile route to develop ferroelectric HfO2-based thin films but also explores their potential applications in FE-RS memories.

AB - Ferroelectric properties and ferroelectric resistive switching (FE-RS) of sputtered Hf0.5Zr0.5O2 (HZO) thin films were investigated. The HZO films with the orthorhombic phase were obtained without capping or post-deposition annealing. Ferroelectricity was demonstrated by polarization-voltage (P-V) hysteresis loops measured in a positive-up negative-down manner and piezoresponse force microscopy. However, defects such as oxygen vacancies caused the films to become leaky. The observed ferroelectricity and semiconducting characteristics led to the FE-RS effect. The FE-RS effect may be explained by a polarization modulated trap-assisted tunneling model. Our study not only provides a facile route to develop ferroelectric HfO2-based thin films but also explores their potential applications in FE-RS memories.

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