Field emission from nitrogen doped tetrahedral amorphous carbon prepared by filtered cathodic vacuum arc technique

L. K. Cheah; X. Shi; B. K. Tay; Z. Sun

doi:10.1116/1.590127

Field emission from nitrogen doped tetrahedral amorphous carbon prepared by filtered cathodic vacuum arc technique

L. K. Cheah^*, X. Shi, B. K. Tay, Z. Sun

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

A study of field emission from nitrogen doped tetrahedral amorphous carbon (ta-C:N) films prepared by the filtered cathodic vacuum arc (FCVA) deposition technique is reported. Field emission from ta-C:N films deposited on Si substrates was investigated in a diode configuration at room temperature and base pressure of 2.0 × 10^-6 Torr. The J-E curves shift significantly towards the low potential side with increasing nitrogen concentration. The lowest field at which field emission was obtained was 10 V μm^-1. A current density of 0.1 mA mm^-2 (assuming the entire film surface is emitting) at 50 V μm^-1 was obtained from these films. Electronic parameters, i.e., the band gap energy and activation energy were measured in order to construct an energy band diagram for the heterojunction structure, and the field emission mechanism is proposed based on this structure.

Original language	English
Pages (from-to)	2049-2051
Number of pages	3
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	16
Issue number	4
DOIs	https://doi.org/10.1116/1.590127
Publication status	Published - 1998
Externally published	Yes

ASJC Scopus Subject Areas

Condensed Matter Physics
Electrical and Electronic Engineering

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@article{b23e942e01d74e0ea061b9ed27a23c1b,

title = "Field emission from nitrogen doped tetrahedral amorphous carbon prepared by filtered cathodic vacuum arc technique",

abstract = "A study of field emission from nitrogen doped tetrahedral amorphous carbon (ta-C:N) films prepared by the filtered cathodic vacuum arc (FCVA) deposition technique is reported. Field emission from ta-C:N films deposited on Si substrates was investigated in a diode configuration at room temperature and base pressure of 2.0 × 10-6 Torr. The J-E curves shift significantly towards the low potential side with increasing nitrogen concentration. The lowest field at which field emission was obtained was 10 V μm-1. A current density of 0.1 mA mm-2 (assuming the entire film surface is emitting) at 50 V μm-1 was obtained from these films. Electronic parameters, i.e., the band gap energy and activation energy were measured in order to construct an energy band diagram for the heterojunction structure, and the field emission mechanism is proposed based on this structure.",

author = "Cheah, {L. K.} and X. Shi and Tay, {B. K.} and Z. Sun",

year = "1998",

doi = "10.1116/1.590127",

language = "English",

volume = "16",

pages = "2049--2051",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

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T1 - Field emission from nitrogen doped tetrahedral amorphous carbon prepared by filtered cathodic vacuum arc technique

AU - Cheah, L. K.

AU - Shi, X.

AU - Tay, B. K.

AU - Sun, Z.

PY - 1998

Y1 - 1998

N2 - A study of field emission from nitrogen doped tetrahedral amorphous carbon (ta-C:N) films prepared by the filtered cathodic vacuum arc (FCVA) deposition technique is reported. Field emission from ta-C:N films deposited on Si substrates was investigated in a diode configuration at room temperature and base pressure of 2.0 × 10-6 Torr. The J-E curves shift significantly towards the low potential side with increasing nitrogen concentration. The lowest field at which field emission was obtained was 10 V μm-1. A current density of 0.1 mA mm-2 (assuming the entire film surface is emitting) at 50 V μm-1 was obtained from these films. Electronic parameters, i.e., the band gap energy and activation energy were measured in order to construct an energy band diagram for the heterojunction structure, and the field emission mechanism is proposed based on this structure.

AB - A study of field emission from nitrogen doped tetrahedral amorphous carbon (ta-C:N) films prepared by the filtered cathodic vacuum arc (FCVA) deposition technique is reported. Field emission from ta-C:N films deposited on Si substrates was investigated in a diode configuration at room temperature and base pressure of 2.0 × 10-6 Torr. The J-E curves shift significantly towards the low potential side with increasing nitrogen concentration. The lowest field at which field emission was obtained was 10 V μm-1. A current density of 0.1 mA mm-2 (assuming the entire film surface is emitting) at 50 V μm-1 was obtained from these films. Electronic parameters, i.e., the band gap energy and activation energy were measured in order to construct an energy band diagram for the heterojunction structure, and the field emission mechanism is proposed based on this structure.

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JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

ER -

Field emission from nitrogen doped tetrahedral amorphous carbon prepared by filtered cathodic vacuum arc technique

Abstract

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