Field emission properties of SiO2-wrapped CNT field emitter

Yu Dian Lim; Liangxing Hu; Xin Xia; Zishan Ali; Shaomeng Wang; Beng Kang Tay; Sheel Aditya; Jianmin Miao

doi:10.1088/1361-6528/aa96ed

Field emission properties of SiO₂-wrapped CNT field emitter

Yu Dian Lim, Liangxing Hu, Xin Xia, Zishan Ali, Shaomeng Wang, Beng Kang Tay^*, Sheel Aditya, Jianmin Miao

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Carbon nanotubes (CNTs) exhibit unstable field emission (FE) behavior with low reliability due to uneven heights of as-grown CNTs. It has been reported that a mechanically polished SiO₂-wrapped CNT field emitter gives consistent FE performance due to its uniform CNT heights. However, there are still a lack of studies on the comparison between the FE properties of freestanding and SiO₂-wrapped CNTs. In this study, we have performed a comparative study on the FE properties of freestanding and SiO₂-wrapped CNT field emitters. From the FE measurements, freestanding CNT field emitter requires lower applied voltage of 5.5 V μm^-1 to achieve FE current density of 22 mA cm^-2; whereas SiO₂-wrapped field emitter requires 8.5 V μm^-1 to achieve the same current density. This can be attributed to the lower CNT tip electric field of CNTs embedded in SiO₂, as obtained from the electric field simulation. Nevertheless, SiO₂-wrapped CNTs show higher consistency in FE current than freestanding CNTs. Under repeated FE measurement, SiO₂-wrapped CNT field emitter achieves consistent FE behavior from the 1st voltage sweep, whereas freestanding field emitter only achieved consistent FE performance after 3rd voltage sweep. At the same time, SiO₂-wrapped CNTs exhibit better emission stability than freestanding CNTs over 4000 s continuous emission.

Original language	English
Article number	015202
Journal	Nanotechnology
Volume	29
Issue number	1
DOIs	https://doi.org/10.1088/1361-6528/aa96ed
Publication status	Published - Jan 5 2018
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2017 IOP Publishing Ltd.

ASJC Scopus Subject Areas

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

Keywords

Carbon nanotubes
field emission
field emitter
SiO

Access to Document

10.1088/1361-6528/aa96ed

Cite this

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title = "Field emission properties of SiO2-wrapped CNT field emitter",

abstract = "Carbon nanotubes (CNTs) exhibit unstable field emission (FE) behavior with low reliability due to uneven heights of as-grown CNTs. It has been reported that a mechanically polished SiO2-wrapped CNT field emitter gives consistent FE performance due to its uniform CNT heights. However, there are still a lack of studies on the comparison between the FE properties of freestanding and SiO2-wrapped CNTs. In this study, we have performed a comparative study on the FE properties of freestanding and SiO2-wrapped CNT field emitters. From the FE measurements, freestanding CNT field emitter requires lower applied voltage of 5.5 V μm-1 to achieve FE current density of 22 mA cm-2; whereas SiO2-wrapped field emitter requires 8.5 V μm-1 to achieve the same current density. This can be attributed to the lower CNT tip electric field of CNTs embedded in SiO2, as obtained from the electric field simulation. Nevertheless, SiO2-wrapped CNTs show higher consistency in FE current than freestanding CNTs. Under repeated FE measurement, SiO2-wrapped CNT field emitter achieves consistent FE behavior from the 1st voltage sweep, whereas freestanding field emitter only achieved consistent FE performance after 3rd voltage sweep. At the same time, SiO2-wrapped CNTs exhibit better emission stability than freestanding CNTs over 4000 s continuous emission.",

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AU - Ali, Zishan

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AU - Tay, Beng Kang

AU - Aditya, Sheel

AU - Miao, Jianmin

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