Fin field-effect transistors based on 2D Bi2O2Se—a huge innovation of 2D transistors device structure

Qundong Fu, Beng Kang Tay, Zheng Liu*

*Corresponding author for this work

Research output: Contribution to journalComment/debatepeer-review

1 Citation (Scopus)
Original languageEnglish
Pages (from-to)2439-2440
Number of pages2
JournalScience China Chemistry
Volume66
Issue number9
DOIs
Publication statusPublished - Sept 2023
Externally publishedYes

ASJC Scopus Subject Areas

  • General Chemistry

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