Fine structure of ultraviolet photoluminescence of tin oxide nanowires

B. Liu; C. W. Cheng; R. Chen; Z. X. Shen; H. J. Fan; H. D. Sun

doi:10.1021/jp9104294

Fine structure of ultraviolet photoluminescence of tin oxide nanowires

B. Liu, C. W. Cheng, R. Chen, Z. X. Shen, H. J. Fan, H. D. Sun

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

75 Citations (Scopus)

Abstract

Photoluminescence (PL) properties of tin oxide (SnO₂) nanowires are studied in detail using high spectral resolution spectroscopy in a temperature range of 10-300 K. The nanowires have an average diameter of 86 nm. The high quality of the nanowires enables the observation of rich fine structures in the ultraviolet PL spectra at low temperatures. By carefully analyzing the temperature and excitation power dependent spectra, the following emissions are identified: recombination of donor-acceptor pairs, excitons bound to neutral and ionized donor impurities and optical transitions from free electrons to neutral acceptor impurities. Moreover, it is believed that the emission from recombination of free excitons is observed, which is unusual for SnO₂, a dipole forbidden direct band gap semiconductor.

Original language	English
Pages (from-to)	3407-3410
Number of pages	4
Journal	Journal of Physical Chemistry C
Volume	114
Issue number	8
DOIs	https://doi.org/10.1021/jp9104294
Publication status	Published - Mar 4 2010
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
General Energy
Physical and Theoretical Chemistry
Surfaces, Coatings and Films

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abstract = "Photoluminescence (PL) properties of tin oxide (SnO2) nanowires are studied in detail using high spectral resolution spectroscopy in a temperature range of 10-300 K. The nanowires have an average diameter of 86 nm. The high quality of the nanowires enables the observation of rich fine structures in the ultraviolet PL spectra at low temperatures. By carefully analyzing the temperature and excitation power dependent spectra, the following emissions are identified: recombination of donor-acceptor pairs, excitons bound to neutral and ionized donor impurities and optical transitions from free electrons to neutral acceptor impurities. Moreover, it is believed that the emission from recombination of free excitons is observed, which is unusual for SnO2, a dipole forbidden direct band gap semiconductor.",

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AU - Liu, B.

AU - Cheng, C. W.

AU - Chen, R.

AU - Shen, Z. X.

AU - Fan, H. J.

AU - Sun, H. D.

PY - 2010/3/4

Y1 - 2010/3/4

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AB - Photoluminescence (PL) properties of tin oxide (SnO2) nanowires are studied in detail using high spectral resolution spectroscopy in a temperature range of 10-300 K. The nanowires have an average diameter of 86 nm. The high quality of the nanowires enables the observation of rich fine structures in the ultraviolet PL spectra at low temperatures. By carefully analyzing the temperature and excitation power dependent spectra, the following emissions are identified: recombination of donor-acceptor pairs, excitons bound to neutral and ionized donor impurities and optical transitions from free electrons to neutral acceptor impurities. Moreover, it is believed that the emission from recombination of free excitons is observed, which is unusual for SnO2, a dipole forbidden direct band gap semiconductor.

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Fine structure of ultraviolet photoluminescence of tin oxide nanowires

Abstract

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