Formation and Diffusion of Intrinsic Point Defects in Bulk and Monolayer MoS2: First-Principles Study

Vasilii Gusakov*, Julia Gusakova, Beng Kang Tay

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The formation and diffusion of intrinsic defects in bulk and monolayer MoS2 are studied. For the first time, the formation energy of a split sulfur and molybdenum Frenkel pair in bulk (6.56 and 12.6 eV) and monolayer (3.95 and 12.1 eV) MoS2 is determined without using chemical potential. For the intrinsic defects, a complete calculation of the diffusion coefficient (pre-exponential factor and activation barrier) is performed and the effect of the defect charge state on the diffusion coefficient is studied.

Original languageEnglish
Article number2100479
JournalPhysica Status Solidi (B): Basic Research
Volume259
Issue number8
DOIs
Publication statusPublished - Aug 2022
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2021 Wiley-VCH GmbH.

ASJC Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Keywords

  • defects
  • diffusion
  • first-principles calculation
  • Frenkel pair
  • TMD

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