Abstract
The formation and diffusion of intrinsic defects in bulk and monolayer MoS2 are studied. For the first time, the formation energy of a split sulfur and molybdenum Frenkel pair in bulk (6.56 and 12.6 eV) and monolayer (3.95 and 12.1 eV) MoS2 is determined without using chemical potential. For the intrinsic defects, a complete calculation of the diffusion coefficient (pre-exponential factor and activation barrier) is performed and the effect of the defect charge state on the diffusion coefficient is studied.
Original language | English |
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Article number | 2100479 |
Journal | Physica Status Solidi (B): Basic Research |
Volume | 259 |
Issue number | 8 |
DOIs | |
Publication status | Published - Aug 2022 |
Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2021 Wiley-VCH GmbH.
ASJC Scopus Subject Areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Keywords
- defects
- diffusion
- first-principles calculation
- Frenkel pair
- TMD