Formation of SiO2 nanocrystals in Lu2O3 high-k dielectric by pulsed laser ablation and application in memory device

C. L. Yuan; P. Darmawan; Y. Setiawan; P. S. Lee

doi:10.1088/0957-4484/17/13/016

Formation of SiO₂ nanocrystals in Lu₂O₃ high-k dielectric by pulsed laser ablation and application in memory device

C. L. Yuan^*, P. Darmawan, Y. Setiawan, P. S. Lee

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We have successfully developed a method based on pulsed laser deposition (PLD) to produce SiO₂ nanocrystals embedded in Lu₂O ₃ high-k dielectric. The mean size and aerial density of the SiO ₂ nanocrystals embedded in Lu₂O₃ are estimated to be about 7nm and 6 × 10¹¹cm^-2, respectively. This metal-oxide-semiconductor capacitor can be operated under smaller operation voltages, and exhibits a large memory window with a good retention time.

Original language	English
Article number	016
Pages (from-to)	3175-3177
Number of pages	3
Journal	Nanotechnology
Volume	17
Issue number	13
DOIs	https://doi.org/10.1088/0957-4484/17/13/016
Publication status	Published - Jul 14 2006
Externally published	Yes

ASJC Scopus Subject Areas

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/0957-4484/17/13/016

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abstract = "We have successfully developed a method based on pulsed laser deposition (PLD) to produce SiO2 nanocrystals embedded in Lu2O 3 high-k dielectric. The mean size and aerial density of the SiO 2 nanocrystals embedded in Lu2O3 are estimated to be about 7nm and 6 × 1011cm-2, respectively. This metal-oxide-semiconductor capacitor can be operated under smaller operation voltages, and exhibits a large memory window with a good retention time.",

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AU - Setiawan, Y.

AU - Lee, P. S.

PY - 2006/7/14

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AB - We have successfully developed a method based on pulsed laser deposition (PLD) to produce SiO2 nanocrystals embedded in Lu2O 3 high-k dielectric. The mean size and aerial density of the SiO 2 nanocrystals embedded in Lu2O3 are estimated to be about 7nm and 6 × 1011cm-2, respectively. This metal-oxide-semiconductor capacitor can be operated under smaller operation voltages, and exhibits a large memory window with a good retention time.

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Formation of SiO₂ nanocrystals in Lu₂O₃ high-k dielectric by pulsed laser ablation and application in memory device

Abstract

ASJC Scopus Subject Areas

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