Formation of SrTiO3 nanocrystals in amorphous Lu 2O3 high-k gate dielectric for floating gate memory application

C. L. Yuan; P. Darmawan; Y. Setiawan; P. S. Lee; J. Ma

doi:10.1063/1.2234302

Formation of SrTiO₃ nanocrystals in amorphous Lu ₂O₃ high-k gate dielectric for floating gate memory application

C. L. Yuan^*, P. Darmawan, Y. Setiawan, P. S. Lee, J. Ma

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We have developed a method based upon pulsed laser deposition to produce SrTiO₃ nanocrystals embedded in amorphous Lu₂O₃ high-k dielectric. The high resolution transmission electron microscopy study revealed the complete isolation of SrTiO₃ nanocrystals embedded in Lu₂O₃ matrix with 4 nm diameter and well distributed with an area density estimated to be about 8 × 10¹¹ cm^-2. A pronounced capacitance-voltage hysteresis is observed with a memory window of ∼1.5 V under the 6 V programming. In addition, the retention characteristics are tested to be robust.

Original language	English
Article number	043104
Journal	Applied Physics Letters
Volume	89
Issue number	4
DOIs	https://doi.org/10.1063/1.2234302
Publication status	Published - 2006
Externally published	Yes

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2234302

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title = "Formation of SrTiO3 nanocrystals in amorphous Lu 2O3 high-k gate dielectric for floating gate memory application",

abstract = "We have developed a method based upon pulsed laser deposition to produce SrTiO3 nanocrystals embedded in amorphous Lu2O3 high-k dielectric. The high resolution transmission electron microscopy study revealed the complete isolation of SrTiO3 nanocrystals embedded in Lu2O3 matrix with 4 nm diameter and well distributed with an area density estimated to be about 8 × 1011 cm-2. A pronounced capacitance-voltage hysteresis is observed with a memory window of ∼1.5 V under the 6 V programming. In addition, the retention characteristics are tested to be robust.",

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AU - Yuan, C. L.

AU - Darmawan, P.

AU - Setiawan, Y.

AU - Lee, P. S.

AU - Ma, J.

PY - 2006

Y1 - 2006

N2 - We have developed a method based upon pulsed laser deposition to produce SrTiO3 nanocrystals embedded in amorphous Lu2O3 high-k dielectric. The high resolution transmission electron microscopy study revealed the complete isolation of SrTiO3 nanocrystals embedded in Lu2O3 matrix with 4 nm diameter and well distributed with an area density estimated to be about 8 × 1011 cm-2. A pronounced capacitance-voltage hysteresis is observed with a memory window of ∼1.5 V under the 6 V programming. In addition, the retention characteristics are tested to be robust.

AB - We have developed a method based upon pulsed laser deposition to produce SrTiO3 nanocrystals embedded in amorphous Lu2O3 high-k dielectric. The high resolution transmission electron microscopy study revealed the complete isolation of SrTiO3 nanocrystals embedded in Lu2O3 matrix with 4 nm diameter and well distributed with an area density estimated to be about 8 × 1011 cm-2. A pronounced capacitance-voltage hysteresis is observed with a memory window of ∼1.5 V under the 6 V programming. In addition, the retention characteristics are tested to be robust.

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Formation of SrTiO₃ nanocrystals in amorphous Lu ₂O₃ high-k gate dielectric for floating gate memory application

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