Gallium-doped tin oxide nano-cuboids for improved dye sensitized solar cell

Jun Jie Teh; Siong Luong Ting; Kam Chew Leong; Jun Li; Peng Chen

doi:10.1021/am403640s

Gallium-doped tin oxide nano-cuboids for improved dye sensitized solar cell

Jun Jie Teh, Siong Luong Ting, Kam Chew Leong, Jun Li, Peng Chen^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

Tin dioxide (SnO₂) is a potential candidate to replace conventional titanium dioxide (TiO₂) in dye-sensitized solar cells (DSSCs) because of its wider bandgap and higher electron mobility. However, SnO₂ suffers from low band edge that causes severe backflow of electrons towards electrolyte (charge recombination). Herein, we demonstrate that gallium (Ga) doping can increase the band edge of SnO₂, and we show that DSSCs using a Ga-doped SnO₂ nano-cuboids based photoanode offer improved open circuit potential (∼0.74 V), fill factor (∼73.7%), and power conversion efficiency (∼4.05%).

Original language	English
Pages (from-to)	11377-11382
Number of pages	6
Journal	ACS Applied Materials and Interfaces
Volume	5
Issue number	21
DOIs	https://doi.org/10.1021/am403640s
Publication status	Published - Nov 13 2013
Externally published	Yes

ASJC Scopus Subject Areas

General Materials Science

Keywords

band edge
charge recombination
dye sensitized solar cell
gallium doping
nano-cuboid
tin oxide

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10.1021/am403640s

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@article{758aeaa4274344979a15d8e4cf1485aa,

title = "Gallium-doped tin oxide nano-cuboids for improved dye sensitized solar cell",

abstract = "Tin dioxide (SnO2) is a potential candidate to replace conventional titanium dioxide (TiO2) in dye-sensitized solar cells (DSSCs) because of its wider bandgap and higher electron mobility. However, SnO2 suffers from low band edge that causes severe backflow of electrons towards electrolyte (charge recombination). Herein, we demonstrate that gallium (Ga) doping can increase the band edge of SnO2, and we show that DSSCs using a Ga-doped SnO2 nano-cuboids based photoanode offer improved open circuit potential (∼0.74 V), fill factor (∼73.7%), and power conversion efficiency (∼4.05%).",

keywords = "band edge, charge recombination, dye sensitized solar cell, gallium doping, nano-cuboid, tin oxide",

author = "Teh, {Jun Jie} and Ting, {Siong Luong} and Leong, {Kam Chew} and Jun Li and Peng Chen",

year = "2013",

month = nov,

day = "13",

doi = "10.1021/am403640s",

language = "English",

volume = "5",

pages = "11377--11382",

journal = "ACS Applied Materials and Interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "21",

}

TY - JOUR

T1 - Gallium-doped tin oxide nano-cuboids for improved dye sensitized solar cell

AU - Teh, Jun Jie

AU - Ting, Siong Luong

AU - Leong, Kam Chew

AU - Li, Jun

AU - Chen, Peng

PY - 2013/11/13

Y1 - 2013/11/13

N2 - Tin dioxide (SnO2) is a potential candidate to replace conventional titanium dioxide (TiO2) in dye-sensitized solar cells (DSSCs) because of its wider bandgap and higher electron mobility. However, SnO2 suffers from low band edge that causes severe backflow of electrons towards electrolyte (charge recombination). Herein, we demonstrate that gallium (Ga) doping can increase the band edge of SnO2, and we show that DSSCs using a Ga-doped SnO2 nano-cuboids based photoanode offer improved open circuit potential (∼0.74 V), fill factor (∼73.7%), and power conversion efficiency (∼4.05%).

AB - Tin dioxide (SnO2) is a potential candidate to replace conventional titanium dioxide (TiO2) in dye-sensitized solar cells (DSSCs) because of its wider bandgap and higher electron mobility. However, SnO2 suffers from low band edge that causes severe backflow of electrons towards electrolyte (charge recombination). Herein, we demonstrate that gallium (Ga) doping can increase the band edge of SnO2, and we show that DSSCs using a Ga-doped SnO2 nano-cuboids based photoanode offer improved open circuit potential (∼0.74 V), fill factor (∼73.7%), and power conversion efficiency (∼4.05%).

KW - band edge

KW - charge recombination

KW - dye sensitized solar cell

KW - gallium doping

KW - nano-cuboid

KW - tin oxide

UR - http://www.scopus.com/inward/record.url?scp=84887575100&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84887575100&partnerID=8YFLogxK

U2 - 10.1021/am403640s

DO - 10.1021/am403640s

M3 - Article

AN - SCOPUS:84887575100

SN - 1944-8244

VL - 5

SP - 11377

EP - 11382

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 21

ER -

Gallium-doped tin oxide nano-cuboids for improved dye sensitized solar cell

Abstract

ASJC Scopus Subject Areas

Keywords

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