Gate modulation in carbon nanotube field effect transistors-based NH3 gas sensors

Ning Peng; Qing Zhang; Yi Chau Lee; Ooi Kiang Tan; Nicola Marzari

doi:10.1016/j.snb.2008.01.025

Gate modulation in carbon nanotube field effect transistors-based NH₃ gas sensors

Ning Peng^*, Qing Zhang, Yi Chau Lee, Ooi Kiang Tan, Nicola Marzari

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

46 Citations (Scopus)

Abstract

Single-walled carbon nanotube field effect transistors (CNTFETs) are used as NH₃ gas sensors and their sensing performances are studied in terms of gate biasing effect. By applying a positive gate bias, a high sensitivity of 178.5% per ppm is achieved. The reversibility of the CNTFET sensors is also found to be significantly improved under the appropriate positive gate voltages. In this study, an in-depth understanding of how the electrical properties of the CNTFETs are affected by NH₃ gas is gained.

Original language	English
Pages (from-to)	191-195
Number of pages	5
Journal	Sensors and Actuators, B: Chemical
Volume	132
Issue number	1
DOIs	https://doi.org/10.1016/j.snb.2008.01.025
Publication status	Published - May 28 2008
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

Keywords

Ammonia
Carbon nanotube
Field effect transistor
Gas sensor
Schottky barrier

Access to Document

10.1016/j.snb.2008.01.025

Cite this

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abstract = "Single-walled carbon nanotube field effect transistors (CNTFETs) are used as NH3 gas sensors and their sensing performances are studied in terms of gate biasing effect. By applying a positive gate bias, a high sensitivity of 178.5% per ppm is achieved. The reversibility of the CNTFET sensors is also found to be significantly improved under the appropriate positive gate voltages. In this study, an in-depth understanding of how the electrical properties of the CNTFETs are affected by NH3 gas is gained.",

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AU - Zhang, Qing

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AU - Marzari, Nicola

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KW - Schottky barrier

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