Growth and characterization of carbon nanotubes on porous silicon

Zhiwei Zhao; Likun Pan; Beng Kang Tay; Changqing Sun

doi:10.1109/NANOEL.2006.1609753

Growth and characterization of carbon nanotubes on porous silicon

Zhiwei Zhao^*, Likun Pan, Beng Kang Tay, Changqing Sun

^*Corresponding author for this work

Nanyang Technological University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Carbon nanotubes (CNTs) have been synthesized on porous silicon (PS) substrates by catalytic pyrolysis of acetylene at 823, 873 and 973 K, respectively. Scanning electron microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, and Field emission measurements have been used to characterize the structures, compositions and electron emission properties of the CNTs, respectively. The results reveal that the diameters of CNTs increase with the growth temperatures as well as the intensities of D and G peaks in Raman spectra. Besides, the carbon content increases as increasing the temperature, whereas the concentrations of oxygen and silicon decrease. Field emission properties for CNTs grown at various temperatures follow exponential increase with the increase of electric field.

Original language	English
Title of host publication	NanoSingapore 2006
Subtitle of host publication	IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings
Pages	379-382
Number of pages	4
DOIs	https://doi.org/10.1109/NANOEL.2006.1609753
Publication status	Published - 2006
Externally published	Yes
Event	2006 IEEE Conference on Emerging Technologies - Nanoelectronics - Singapore, Singapore Duration: Jan 10 2006 → Jan 13 2006

Publication series

Name	NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings
Volume	2006

Conference

Conference	2006 IEEE Conference on Emerging Technologies - Nanoelectronics
Country/Territory	Singapore
City	Singapore
Period	1/10/06 → 1/13/06

ASJC Scopus Subject Areas

General Engineering

Access to Document

10.1109/NANOEL.2006.1609753

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Zhao, Z., Pan, L., Tay, B. K., & Sun, C. (2006). Growth and characterization of carbon nanotubes on porous silicon. In NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings (pp. 379-382). Article 1609753 (NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings; Vol. 2006). https://doi.org/10.1109/NANOEL.2006.1609753

@inproceedings{8af109bd1aec4f6ba20c6ae32086dd00,

title = "Growth and characterization of carbon nanotubes on porous silicon",

abstract = "Carbon nanotubes (CNTs) have been synthesized on porous silicon (PS) substrates by catalytic pyrolysis of acetylene at 823, 873 and 973 K, respectively. Scanning electron microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, and Field emission measurements have been used to characterize the structures, compositions and electron emission properties of the CNTs, respectively. The results reveal that the diameters of CNTs increase with the growth temperatures as well as the intensities of D and G peaks in Raman spectra. Besides, the carbon content increases as increasing the temperature, whereas the concentrations of oxygen and silicon decrease. Field emission properties for CNTs grown at various temperatures follow exponential increase with the increase of electric field.",

author = "Zhiwei Zhao and Likun Pan and Tay, {Beng Kang} and Changqing Sun",

year = "2006",

doi = "10.1109/NANOEL.2006.1609753",

language = "English",

isbn = "0780393589",

series = "NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings",

pages = "379--382",

booktitle = "NanoSingapore 2006",

note = "2006 IEEE Conference on Emerging Technologies - Nanoelectronics ; Conference date: 10-01-2006 Through 13-01-2006",

}

Zhao, Z, Pan, L, Tay, BK & Sun, C 2006, Growth and characterization of carbon nanotubes on porous silicon. in NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings., 1609753, NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings, vol. 2006, pp. 379-382, 2006 IEEE Conference on Emerging Technologies - Nanoelectronics, Singapore, Singapore, 1/10/06. https://doi.org/10.1109/NANOEL.2006.1609753

Growth and characterization of carbon nanotubes on porous silicon. / Zhao, Zhiwei; Pan, Likun; Tay, Beng Kang et al.
NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings. 2006. p. 379-382 1609753 (NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings; Vol. 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Growth and characterization of carbon nanotubes on porous silicon

AU - Zhao, Zhiwei

AU - Pan, Likun

AU - Tay, Beng Kang

AU - Sun, Changqing

PY - 2006

Y1 - 2006

N2 - Carbon nanotubes (CNTs) have been synthesized on porous silicon (PS) substrates by catalytic pyrolysis of acetylene at 823, 873 and 973 K, respectively. Scanning electron microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, and Field emission measurements have been used to characterize the structures, compositions and electron emission properties of the CNTs, respectively. The results reveal that the diameters of CNTs increase with the growth temperatures as well as the intensities of D and G peaks in Raman spectra. Besides, the carbon content increases as increasing the temperature, whereas the concentrations of oxygen and silicon decrease. Field emission properties for CNTs grown at various temperatures follow exponential increase with the increase of electric field.

AB - Carbon nanotubes (CNTs) have been synthesized on porous silicon (PS) substrates by catalytic pyrolysis of acetylene at 823, 873 and 973 K, respectively. Scanning electron microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, and Field emission measurements have been used to characterize the structures, compositions and electron emission properties of the CNTs, respectively. The results reveal that the diameters of CNTs increase with the growth temperatures as well as the intensities of D and G peaks in Raman spectra. Besides, the carbon content increases as increasing the temperature, whereas the concentrations of oxygen and silicon decrease. Field emission properties for CNTs grown at various temperatures follow exponential increase with the increase of electric field.

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U2 - 10.1109/NANOEL.2006.1609753

DO - 10.1109/NANOEL.2006.1609753

M3 - Conference contribution

AN - SCOPUS:33750842294

SN - 0780393589

SN - 9780780393585

T3 - NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings

SP - 379

EP - 382

BT - NanoSingapore 2006

T2 - 2006 IEEE Conference on Emerging Technologies - Nanoelectronics

Y2 - 10 January 2006 through 13 January 2006

ER -

Growth and characterization of carbon nanotubes on porous silicon

Abstract

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