Growth and optical properties of Nb-doped WS2 monolayers

Shogo Sasaki; Yu Kobayashi; Zheng Liu; Kazutomo Suenaga; Yutaka Maniwa; Yuhei Miyauchi; Yasumitsu Miyata

doi:10.7567/APEX.9.071201

Growth and optical properties of Nb-doped WS₂ monolayers

Shogo Sasaki, Yu Kobayashi, Zheng Liu, Kazutomo Suenaga, Yutaka Maniwa, Yuhei Miyauchi, Yasumitsu Miyata

Research output: Contribution to journal › Article › peer-review

69 Citations (Scopus)

Abstract

We report the chemical vapor deposition growth of Nb-doped WS₂ monolayers and their characterization. Electron microscopy observations reveal that the Nb atom was substituted at the W site at a rate of approximately 0.5%. Unlike Mo doping, Nb-doped samples have photoluminescence (PL) peaks at 1.4-1.6 eV at room temperature. The peak energies are lower than the optical bandgap of 1.8 eV, and a saturation behavior of PL intensity is observed with the increase in excitation power. These results indicate that the observed PL peaks are assignable to the emission from impurity states generated by the substitution of Nb.

Original language	English
Article number	071201
Journal	Applied Physics Express
Volume	9
Issue number	7
DOIs	https://doi.org/10.7567/APEX.9.071201
Publication status	Published - Jul 2016
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2016 The Japan Society of Applied Physics.

ASJC Scopus Subject Areas

General Engineering
General Physics and Astronomy

Access to Document

10.7567/APEX.9.071201

Cite this

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title = "Growth and optical properties of Nb-doped WS2 monolayers",

abstract = "We report the chemical vapor deposition growth of Nb-doped WS2 monolayers and their characterization. Electron microscopy observations reveal that the Nb atom was substituted at the W site at a rate of approximately 0.5%. Unlike Mo doping, Nb-doped samples have photoluminescence (PL) peaks at 1.4-1.6 eV at room temperature. The peak energies are lower than the optical bandgap of 1.8 eV, and a saturation behavior of PL intensity is observed with the increase in excitation power. These results indicate that the observed PL peaks are assignable to the emission from impurity states generated by the substitution of Nb.",

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AU - Sasaki, Shogo

AU - Kobayashi, Yu

AU - Liu, Zheng

AU - Suenaga, Kazutomo

AU - Maniwa, Yutaka

AU - Miyauchi, Yuhei

AU - Miyata, Yasumitsu

PY - 2016/7

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AB - We report the chemical vapor deposition growth of Nb-doped WS2 monolayers and their characterization. Electron microscopy observations reveal that the Nb atom was substituted at the W site at a rate of approximately 0.5%. Unlike Mo doping, Nb-doped samples have photoluminescence (PL) peaks at 1.4-1.6 eV at room temperature. The peak energies are lower than the optical bandgap of 1.8 eV, and a saturation behavior of PL intensity is observed with the increase in excitation power. These results indicate that the observed PL peaks are assignable to the emission from impurity states generated by the substitution of Nb.

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