Abstract
We have grown AlN on MnO (111) substrates with pulsed laser deposition (PLD) and characterized their structural properties using various techniques. We have found that hexagonal AlN successfully grows epitaxially on MnO with the use of PLD. Grazing incidence-angle X-ray diffraction (GIXD) measurements have revealed that the epitaxial relationship between MnO and AlN is [0001]AlN//[111]MnO and [11-20]AlN//[1-10]MnO, which minimizes the lattice mismatch (0.8%). We have also found that the heterointerface for AlN/MnO is less abrupt than that for AlN/Al2O3 due to the chemical vulnerability of MnO.
| Original language | English |
|---|---|
| Pages (from-to) | 215-217 |
| Number of pages | 3 |
| Journal | Thin Solid Films |
| Volume | 435 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - Jul 1 2003 |
| Externally published | Yes |
| Event | Proccedings of the Joint International Plasma Symposium - Jeju Island, Korea, Republic of Duration: Jul 1 2002 → Jul 4 2002 |
ASJC Scopus Subject Areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
Keywords
- AlN
- Hetero-epitaxial growth
- MnO
- Pulsed laser deposition (PLD)