HfO2-TiO2 ultra-thin gate dielectric by RF sputtering

G. X. Li; X. F. Chen; W. Ren; P. Shi; X. Q. Wu; O. K. Tan; W. G. Zhu; X. Yao

doi:10.1080/00150193.2010.492737

HfO₂-TiO₂ ultra-thin gate dielectric by RF sputtering

G. X. Li, X. F. Chen, W. Ren, P. Shi, X. Q. Wu, O. K. Tan, W. G. Zhu, X. Yao

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

High-K HfO₂-TiO₂ ultra-thin films with sub-nanometer laminate HfO₂/TiO₂ stacks were deposited on p-type (100) silicon wafer using magnetron sputtering at 300°C. The as-deposited films are amorphous which could be sustained up to 900°C in air. The off-stoichiometric films show further improved thermal stability due to obstacled crystallization process. It is revealed that Hf-rich films trends to form thicker interfacial layer due to the stability of HfO₂, whereas Ti-rich films usually demonstrate higher leakage current owing to the low band gap of TiO₂. In this work, 20-nm-thick films with Hf/Ti ratio of 46/54 demonstrates higher permittivity up to 50 with low leakage current 1.2 × 10^-8 A/cm² at 1 V.

Original language	English
Pages (from-to)	129-136
Number of pages	8
Journal	Ferroelectrics
Volume	410
Issue number	1
DOIs	https://doi.org/10.1080/00150193.2010.492737
Publication status	Published - 2011
Externally published	Yes
Event	12th International Meeting on Ferroelectricity, IMF-12 and the 18th IEEE International Symposium on Applications of Ferroelectrics, ISAF-18 - Xi'an, China Duration: Aug 23 2009 → Aug 27 2009

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Keywords

HfTiO thin films
High-K gate dielectrics
sputtering

Access to Document

10.1080/00150193.2010.492737

Cite this

@article{40966702b59945219f0a16b64c3caf03,

title = "HfO2-TiO2 ultra-thin gate dielectric by RF sputtering",

abstract = "High-K HfO2-TiO2 ultra-thin films with sub-nanometer laminate HfO2/TiO2 stacks were deposited on p-type (100) silicon wafer using magnetron sputtering at 300°C. The as-deposited films are amorphous which could be sustained up to 900°C in air. The off-stoichiometric films show further improved thermal stability due to obstacled crystallization process. It is revealed that Hf-rich films trends to form thicker interfacial layer due to the stability of HfO2, whereas Ti-rich films usually demonstrate higher leakage current owing to the low band gap of TiO2. In this work, 20-nm-thick films with Hf/Ti ratio of 46/54 demonstrates higher permittivity up to 50 with low leakage current 1.2 × 10-8 A/cm2 at 1 V.",

keywords = "HfTiO thin films, High-K gate dielectrics, sputtering",

author = "Li, {G. X.} and Chen, {X. F.} and W. Ren and P. Shi and Wu, {X. Q.} and Tan, {O. K.} and Zhu, {W. G.} and X. Yao",

year = "2011",

doi = "10.1080/00150193.2010.492737",

language = "English",

volume = "410",

pages = "129--136",

journal = "Ferroelectrics",

issn = "0015-0193",

publisher = "Taylor and Francis Ltd.",

number = "1",

note = "12th International Meeting on Ferroelectricity, IMF-12 and the 18th IEEE International Symposium on Applications of Ferroelectrics, ISAF-18 ; Conference date: 23-08-2009 Through 27-08-2009",

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TY - JOUR

T1 - HfO2-TiO2 ultra-thin gate dielectric by RF sputtering

AU - Li, G. X.

AU - Chen, X. F.

AU - Ren, W.

AU - Shi, P.

AU - Wu, X. Q.

AU - Tan, O. K.

AU - Zhu, W. G.

AU - Yao, X.

PY - 2011

Y1 - 2011

N2 - High-K HfO2-TiO2 ultra-thin films with sub-nanometer laminate HfO2/TiO2 stacks were deposited on p-type (100) silicon wafer using magnetron sputtering at 300°C. The as-deposited films are amorphous which could be sustained up to 900°C in air. The off-stoichiometric films show further improved thermal stability due to obstacled crystallization process. It is revealed that Hf-rich films trends to form thicker interfacial layer due to the stability of HfO2, whereas Ti-rich films usually demonstrate higher leakage current owing to the low band gap of TiO2. In this work, 20-nm-thick films with Hf/Ti ratio of 46/54 demonstrates higher permittivity up to 50 with low leakage current 1.2 × 10-8 A/cm2 at 1 V.

AB - High-K HfO2-TiO2 ultra-thin films with sub-nanometer laminate HfO2/TiO2 stacks were deposited on p-type (100) silicon wafer using magnetron sputtering at 300°C. The as-deposited films are amorphous which could be sustained up to 900°C in air. The off-stoichiometric films show further improved thermal stability due to obstacled crystallization process. It is revealed that Hf-rich films trends to form thicker interfacial layer due to the stability of HfO2, whereas Ti-rich films usually demonstrate higher leakage current owing to the low band gap of TiO2. In this work, 20-nm-thick films with Hf/Ti ratio of 46/54 demonstrates higher permittivity up to 50 with low leakage current 1.2 × 10-8 A/cm2 at 1 V.

KW - HfTiO thin films

KW - High-K gate dielectrics

KW - sputtering

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SN - 0015-0193

VL - 410

SP - 129

EP - 136

JO - Ferroelectrics

JF - Ferroelectrics

IS - 1

T2 - 12th International Meeting on Ferroelectricity, IMF-12 and the 18th IEEE International Symposium on Applications of Ferroelectrics, ISAF-18

Y2 - 23 August 2009 through 27 August 2009

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