High density diffusion barrier of ionized metal plasma deposited Ti in Al-0.5% Cu/Ti/SiO2/Si structure

S. Li; Y. K. Lee; W. Gao; T. White; Z. L. Dong; K. Maung Latt

doi:10.1116/1.1347048

High density diffusion barrier of ionized metal plasma deposited Ti in Al-0.5% Cu/Ti/SiO₂/Si structure

S. Li^*, Y. K. Lee, W. Gao, T. White, Z. L. Dong, K. Maung Latt

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Ionized metal plasma (IPM) techniques were used to produce a layered structure of Al-0.5%Cu/Ti/SiO₂/Si. The individual layers were characterized by TEM, STEM, and RBS.

Original language	English
Pages (from-to)	388-396
Number of pages	9
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	19
Issue number	2
DOIs	https://doi.org/10.1116/1.1347048
Publication status	Published - Mar 2001
Externally published	Yes

ASJC Scopus Subject Areas

Condensed Matter Physics
Electrical and Electronic Engineering

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title = "High density diffusion barrier of ionized metal plasma deposited Ti in Al-0.5% Cu/Ti/SiO2/Si structure",

abstract = "Ionized metal plasma (IPM) techniques were used to produce a layered structure of Al-0.5%Cu/Ti/SiO2/Si. The individual layers were characterized by TEM, STEM, and RBS.",

author = "S. Li and Lee, {Y. K.} and W. Gao and T. White and Dong, {Z. L.} and Latt, {K. Maung}",

year = "2001",

month = mar,

doi = "10.1116/1.1347048",

language = "English",

volume = "19",

pages = "388--396",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

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number = "2",

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T1 - High density diffusion barrier of ionized metal plasma deposited Ti in Al-0.5% Cu/Ti/SiO2/Si structure

AU - Li, S.

AU - Lee, Y. K.

AU - Gao, W.

AU - White, T.

AU - Dong, Z. L.

AU - Latt, K. Maung

PY - 2001/3

Y1 - 2001/3

N2 - Ionized metal plasma (IPM) techniques were used to produce a layered structure of Al-0.5%Cu/Ti/SiO2/Si. The individual layers were characterized by TEM, STEM, and RBS.

AB - Ionized metal plasma (IPM) techniques were used to produce a layered structure of Al-0.5%Cu/Ti/SiO2/Si. The individual layers were characterized by TEM, STEM, and RBS.

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M3 - Article

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SN - 1071-1023

VL - 19

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EP - 396

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 2

ER -

High density diffusion barrier of ionized metal plasma deposited Ti in Al-0.5% Cu/Ti/SiO₂/Si structure

Abstract

ASJC Scopus Subject Areas

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