High deposition rate of aluminum oxide film by off-plane double bend filtered cathodic vacuum arc technique

Y. S. Choong; B. K. Tay; S. P. Lau; X. Shi; Y. H. Cheng

doi:10.1016/S0040-6090(00)01878-2

High deposition rate of aluminum oxide film by off-plane double bend filtered cathodic vacuum arc technique

Y. S. Choong^*, B. K. Tay, S. P. Lau, X. Shi, Y. H. Cheng

^*Corresponding author for this work

Sch. Elec. Electron. Eng.

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The deposition of stoichiometric aluminum oxide films by off-plane double bend filtered cathodic vacuum arc (FCVA) is first reported. A novel method for introducing a reactive gas such as oxygen into the deposition chamber is presented. As a result, high deposition rate was made possible by this FCVA technique. Stoichiometric aluminum oxide films were deposited successfully under varying arc current and oxygen partial pressure. In general, a higher partial pressure is needed at higher arc current in order to maintain stoichiometric composition. The utilization efficiency of the aluminum target was also studied.

Original language	English
Pages (from-to)	1-5
Number of pages	5
Journal	Thin Solid Films
Volume	386
Issue number	1
DOIs	https://doi.org/10.1016/S0040-6090(00)01878-2
Publication status	Published - May 1 2001
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/S0040-6090(00)01878-2

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@article{ce4875f5f7564b07be14e3237cb8cdd4,

title = "High deposition rate of aluminum oxide film by off-plane double bend filtered cathodic vacuum arc technique",

abstract = "The deposition of stoichiometric aluminum oxide films by off-plane double bend filtered cathodic vacuum arc (FCVA) is first reported. A novel method for introducing a reactive gas such as oxygen into the deposition chamber is presented. As a result, high deposition rate was made possible by this FCVA technique. Stoichiometric aluminum oxide films were deposited successfully under varying arc current and oxygen partial pressure. In general, a higher partial pressure is needed at higher arc current in order to maintain stoichiometric composition. The utilization efficiency of the aluminum target was also studied.",

author = "Choong, {Y. S.} and Tay, {B. K.} and Lau, {S. P.} and X. Shi and Cheng, {Y. H.}",

year = "2001",

month = may,

day = "1",

doi = "10.1016/S0040-6090(00)01878-2",

language = "English",

volume = "386",

pages = "1--5",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - High deposition rate of aluminum oxide film by off-plane double bend filtered cathodic vacuum arc technique

AU - Choong, Y. S.

AU - Tay, B. K.

AU - Lau, S. P.

AU - Shi, X.

AU - Cheng, Y. H.

PY - 2001/5/1

Y1 - 2001/5/1

N2 - The deposition of stoichiometric aluminum oxide films by off-plane double bend filtered cathodic vacuum arc (FCVA) is first reported. A novel method for introducing a reactive gas such as oxygen into the deposition chamber is presented. As a result, high deposition rate was made possible by this FCVA technique. Stoichiometric aluminum oxide films were deposited successfully under varying arc current and oxygen partial pressure. In general, a higher partial pressure is needed at higher arc current in order to maintain stoichiometric composition. The utilization efficiency of the aluminum target was also studied.

AB - The deposition of stoichiometric aluminum oxide films by off-plane double bend filtered cathodic vacuum arc (FCVA) is first reported. A novel method for introducing a reactive gas such as oxygen into the deposition chamber is presented. As a result, high deposition rate was made possible by this FCVA technique. Stoichiometric aluminum oxide films were deposited successfully under varying arc current and oxygen partial pressure. In general, a higher partial pressure is needed at higher arc current in order to maintain stoichiometric composition. The utilization efficiency of the aluminum target was also studied.

UR - http://www.scopus.com/inward/record.url?scp=0035341772&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035341772&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(00)01878-2

DO - 10.1016/S0040-6090(00)01878-2

M3 - Article

AN - SCOPUS:0035341772

SN - 0040-6090

VL - 386

SP - 1

EP - 5

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -

High deposition rate of aluminum oxide film by off-plane double bend filtered cathodic vacuum arc technique

Abstract

ASJC Scopus Subject Areas

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