High-performance organic single-crystal field-effect transistors of indolo[3,2-b]carbazole and their potential applications in gas controlled organic memory devices

Hui Jiang; Huaping Zhao; Keke K. Zhang; Xiaodong Chen; Christian Kloc; Wenping Hu

doi:10.1002/adma.201102975

High-performance organic single-crystal field-effect transistors of indolo[3,2-b]carbazole and their potential applications in gas controlled organic memory devices

Hui Jiang^*, Huaping Zhao, Keke K. Zhang, Xiaodong Chen, Christian Kloc, Wenping Hu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

76 Citations (Scopus)

Abstract

Single crystals of linear fused rings with nitrogen heteroatom, indolo[3,2-b]carbazole (ICZ), have been synthesized. In addition, field-effect transistors (FETs) of planar ICZ single crystals have been fabricated. The hole mobility approaches values of up to 1.0 cm ² V ^-1 s ^-1 with an on/off ratio of ∼10 ⁶. The transistors exhibit sensitivity to nitric oxide (NO). The gas-sensitive behavior indicates the great potential for future low-cost and high-density storage devices.

Original language	English
Pages (from-to)	5075-5080
Number of pages	6
Journal	Advanced Materials
Volume	23
Issue number	43
DOIs	https://doi.org/10.1002/adma.201102975
Publication status	Published - Nov 16 2011
Externally published	Yes

ASJC Scopus Subject Areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

Keywords

field-effect transistors
gas sensing
memory
mobility
organic single crystal

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@article{06a4654e0e344356b0ef1e0d770ff893,

title = "High-performance organic single-crystal field-effect transistors of indolo[3,2-b]carbazole and their potential applications in gas controlled organic memory devices",

abstract = "Single crystals of linear fused rings with nitrogen heteroatom, indolo[3,2-b]carbazole (ICZ), have been synthesized. In addition, field-effect transistors (FETs) of planar ICZ single crystals have been fabricated. The hole mobility approaches values of up to 1.0 cm 2 V -1 s -1 with an on/off ratio of ∼10 6. The transistors exhibit sensitivity to nitric oxide (NO). The gas-sensitive behavior indicates the great potential for future low-cost and high-density storage devices.",

keywords = "field-effect transistors, gas sensing, memory, mobility, organic single crystal",

author = "Hui Jiang and Huaping Zhao and Zhang, {Keke K.} and Xiaodong Chen and Christian Kloc and Wenping Hu",

year = "2011",

month = nov,

day = "16",

doi = "10.1002/adma.201102975",

language = "English",

volume = "23",

pages = "5075--5080",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-VCH Verlag",

number = "43",

}

TY - JOUR

T1 - High-performance organic single-crystal field-effect transistors of indolo[3,2-b]carbazole and their potential applications in gas controlled organic memory devices

AU - Jiang, Hui

AU - Zhao, Huaping

AU - Zhang, Keke K.

AU - Chen, Xiaodong

AU - Kloc, Christian

AU - Hu, Wenping

PY - 2011/11/16

Y1 - 2011/11/16

N2 - Single crystals of linear fused rings with nitrogen heteroatom, indolo[3,2-b]carbazole (ICZ), have been synthesized. In addition, field-effect transistors (FETs) of planar ICZ single crystals have been fabricated. The hole mobility approaches values of up to 1.0 cm 2 V -1 s -1 with an on/off ratio of ∼10 6. The transistors exhibit sensitivity to nitric oxide (NO). The gas-sensitive behavior indicates the great potential for future low-cost and high-density storage devices.

AB - Single crystals of linear fused rings with nitrogen heteroatom, indolo[3,2-b]carbazole (ICZ), have been synthesized. In addition, field-effect transistors (FETs) of planar ICZ single crystals have been fabricated. The hole mobility approaches values of up to 1.0 cm 2 V -1 s -1 with an on/off ratio of ∼10 6. The transistors exhibit sensitivity to nitric oxide (NO). The gas-sensitive behavior indicates the great potential for future low-cost and high-density storage devices.

KW - field-effect transistors

KW - gas sensing

KW - memory

KW - mobility

KW - organic single crystal

UR - http://www.scopus.com/inward/record.url?scp=81255179656&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=81255179656&partnerID=8YFLogxK

U2 - 10.1002/adma.201102975

DO - 10.1002/adma.201102975

M3 - Article

C2 - 21956583

AN - SCOPUS:81255179656

SN - 0935-9648

VL - 23

SP - 5075

EP - 5080

JO - Advanced Materials

JF - Advanced Materials

IS - 43

ER -

High-performance organic single-crystal field-effect transistors of indolo[3,2-b]carbazole and their potential applications in gas controlled organic memory devices

Abstract

ASJC Scopus Subject Areas

Keywords

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