TY - GEN
T1 - Impact of field enhancement on TDDB lifetimes of Cu/Low-k test structures
AU - Ong, R. X.
AU - Tan, T. L.
AU - Gan, C. L.
PY - 2012
Y1 - 2012
N2 - Small area finger test structures were designed to isolate and study the physical failure analysis of Cu/low-k system. This paper aims to study the impact of field enhancement and area scaling through the comparison of dielectric breakdown lifetime of the finger test structures and conventional comb structure. It was found that the lifetime extracted from finger tests structures does not scale to comb structure by the Poisson area scaling law. Discrepancy is believed to have arisen due to the difference in field enhancement caused by the difference in shapes. Finite element modelling (FEM) simulation was performed using physical images to affirm this field enhancement effect. Finger test structure was found to suffer from a higher field enhancement compared to the comb structure, hence supporting the experimental results where extrapolation of lifetime from comb structure to small area over-estimates the lifetime.
AB - Small area finger test structures were designed to isolate and study the physical failure analysis of Cu/low-k system. This paper aims to study the impact of field enhancement and area scaling through the comparison of dielectric breakdown lifetime of the finger test structures and conventional comb structure. It was found that the lifetime extracted from finger tests structures does not scale to comb structure by the Poisson area scaling law. Discrepancy is believed to have arisen due to the difference in field enhancement caused by the difference in shapes. Finite element modelling (FEM) simulation was performed using physical images to affirm this field enhancement effect. Finger test structure was found to suffer from a higher field enhancement compared to the comb structure, hence supporting the experimental results where extrapolation of lifetime from comb structure to small area over-estimates the lifetime.
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U2 - 10.1109/IPFA.2012.6306255
DO - 10.1109/IPFA.2012.6306255
M3 - Conference contribution
AN - SCOPUS:84869030617
SN - 9781467309806
T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
BT - 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012
T2 - 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012
Y2 - 2 July 2012 through 6 July 2012
ER -