Impact of pre-existing voids on electromigration in copper interconnects

Hendro Mario; Meng Keong Lim; Chee Lip Gan

doi:10.1109/IPFA.2012.6306330

Impact of pre-existing voids on electromigration in copper interconnects

Hendro Mario^*, Meng Keong Lim, Chee Lip Gan

^*Corresponding author for this work

Nanyang Technological University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Previous in-situ electromigration experiments on copper interconnect have shown voids drifting towards the cathode, instead of nucleating at the cathode end. These voids could have pre-existed in the line before stressing and drifted towards the cathode. Furthermore, fatal voids observed from failure analysis that are located away from the cathode also strongly suggest, through modelling and simulation, that the voids grew from pre-existing ones. This failure mechanism is different under typical accelerated test conditions from what is expected at service conditions, and thus needs to be well understood. However, a design modification on the interconnect may help to reduce the impact of pre-existing voids on electromigration lifetime.

Original language	English
Title of host publication	2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012
DOIs	https://doi.org/10.1109/IPFA.2012.6306330
Publication status	Published - 2012
Externally published	Yes
Event	2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012 - Singapore, Singapore Duration: Jul 2 2012 → Jul 6 2012

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference	2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012
Country/Territory	Singapore
City	Singapore
Period	7/2/12 → 7/6/12

ASJC Scopus Subject Areas

Electrical and Electronic Engineering

Access to Document

10.1109/IPFA.2012.6306330

Cite this

Mario, H., Lim, M. K., & Gan, C. L. (2012). Impact of pre-existing voids on electromigration in copper interconnects. In 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012 Article 6306330 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). https://doi.org/10.1109/IPFA.2012.6306330

@inproceedings{22d687f962ce4db5ad2e277a85999f05,

title = "Impact of pre-existing voids on electromigration in copper interconnects",

abstract = "Previous in-situ electromigration experiments on copper interconnect have shown voids drifting towards the cathode, instead of nucleating at the cathode end. These voids could have pre-existed in the line before stressing and drifted towards the cathode. Furthermore, fatal voids observed from failure analysis that are located away from the cathode also strongly suggest, through modelling and simulation, that the voids grew from pre-existing ones. This failure mechanism is different under typical accelerated test conditions from what is expected at service conditions, and thus needs to be well understood. However, a design modification on the interconnect may help to reduce the impact of pre-existing voids on electromigration lifetime.",

author = "Hendro Mario and Lim, {Meng Keong} and Gan, {Chee Lip}",

year = "2012",

doi = "10.1109/IPFA.2012.6306330",

language = "English",

isbn = "9781467309806",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

booktitle = "2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012",

note = "2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012 ; Conference date: 02-07-2012 Through 06-07-2012",

}

Mario, H, Lim, MK & Gan, CL 2012, Impact of pre-existing voids on electromigration in copper interconnects. in 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012., 6306330, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012, Singapore, Singapore, 7/2/12. https://doi.org/10.1109/IPFA.2012.6306330

Impact of pre-existing voids on electromigration in copper interconnects. / Mario, Hendro; Lim, Meng Keong; Gan, Chee Lip.
2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012. 2012. 6306330 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - Previous in-situ electromigration experiments on copper interconnect have shown voids drifting towards the cathode, instead of nucleating at the cathode end. These voids could have pre-existed in the line before stressing and drifted towards the cathode. Furthermore, fatal voids observed from failure analysis that are located away from the cathode also strongly suggest, through modelling and simulation, that the voids grew from pre-existing ones. This failure mechanism is different under typical accelerated test conditions from what is expected at service conditions, and thus needs to be well understood. However, a design modification on the interconnect may help to reduce the impact of pre-existing voids on electromigration lifetime.

AB - Previous in-situ electromigration experiments on copper interconnect have shown voids drifting towards the cathode, instead of nucleating at the cathode end. These voids could have pre-existed in the line before stressing and drifted towards the cathode. Furthermore, fatal voids observed from failure analysis that are located away from the cathode also strongly suggest, through modelling and simulation, that the voids grew from pre-existing ones. This failure mechanism is different under typical accelerated test conditions from what is expected at service conditions, and thus needs to be well understood. However, a design modification on the interconnect may help to reduce the impact of pre-existing voids on electromigration lifetime.

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Mario H, Lim MK, Gan CL. Impact of pre-existing voids on electromigration in copper interconnects. In 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012. 2012. 6306330. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2012.6306330

Impact of pre-existing voids on electromigration in copper interconnects

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