Impact of voids in Ti-salicided p+ polysilicon lines on TiSi2 electrical properties

H. N. Chua; K. L. Pey; S. Y. Siah; L. Y. Ong; E. H. Lim; C. L. Gan; K. H. See; C. S. Ho

Impact of voids in Ti-salicided p⁺ polysilicon lines on TiSi₂ electrical properties

H. N. Chua^*, K. L. Pey, S. Y. Siah, L. Y. Ong, E. H. Lim, C. L. Gan, K. H. See, C. S. Ho

^*Corresponding author for this work

National University of Singapore

Research output: Contribution to conference › Paper › peer-review

9 Citations (Scopus)

Abstract

We report the effect of voids in Ti-salicided narrow p⁺-doped polysilicon lines on the electrical performance of the TiSi₂ films. The variation in the sheet resistance of the TiSi₂ was found to correlate well to the void density, which is a function of the polySi implant species and dose, the gate line-width and the p⁺ anneal. In addition, we find that the low frequency noise measurements is a good diagnostic method to determine the extent of voiding in silicided films.

Original language	English
Pages	44-49
Number of pages	6
Publication status	Published - 1999
Externally published	Yes
Event	Proceedings of the 1999 7th International Symposium on Physical and Failure Analysis of Integrated Circuits - Singapore, Singapore Duration: Jul 5 1999 → Jul 9 1999

Conference

Conference	Proceedings of the 1999 7th International Symposium on Physical and Failure Analysis of Integrated Circuits
City	Singapore, Singapore
Period	7/5/99 → 7/9/99

ASJC Scopus Subject Areas

General Engineering

Cite this

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title = "Impact of voids in Ti-salicided p+ polysilicon lines on TiSi2 electrical properties",

abstract = "We report the effect of voids in Ti-salicided narrow p+-doped polysilicon lines on the electrical performance of the TiSi2 films. The variation in the sheet resistance of the TiSi2 was found to correlate well to the void density, which is a function of the polySi implant species and dose, the gate line-width and the p+ anneal. In addition, we find that the low frequency noise measurements is a good diagnostic method to determine the extent of voiding in silicided films.",

author = "Chua, {H. N.} and Pey, {K. L.} and Siah, {S. Y.} and Ong, {L. Y.} and Lim, {E. H.} and Gan, {C. L.} and See, {K. H.} and Ho, {C. S.}",

year = "1999",

language = "English",

pages = "44--49",

note = "Proceedings of the 1999 7th International Symposium on Physical and Failure Analysis of Integrated Circuits ; Conference date: 05-07-1999 Through 09-07-1999",

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TY - CONF

T1 - Impact of voids in Ti-salicided p+ polysilicon lines on TiSi2 electrical properties

AU - Chua, H. N.

AU - Pey, K. L.

AU - Siah, S. Y.

AU - Ong, L. Y.

AU - Lim, E. H.

AU - Gan, C. L.

AU - See, K. H.

AU - Ho, C. S.

PY - 1999

Y1 - 1999

N2 - We report the effect of voids in Ti-salicided narrow p+-doped polysilicon lines on the electrical performance of the TiSi2 films. The variation in the sheet resistance of the TiSi2 was found to correlate well to the void density, which is a function of the polySi implant species and dose, the gate line-width and the p+ anneal. In addition, we find that the low frequency noise measurements is a good diagnostic method to determine the extent of voiding in silicided films.

AB - We report the effect of voids in Ti-salicided narrow p+-doped polysilicon lines on the electrical performance of the TiSi2 films. The variation in the sheet resistance of the TiSi2 was found to correlate well to the void density, which is a function of the polySi implant species and dose, the gate line-width and the p+ anneal. In addition, we find that the low frequency noise measurements is a good diagnostic method to determine the extent of voiding in silicided films.

UR - http://www.scopus.com/inward/record.url?scp=0033285859&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033285859&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0033285859

SP - 44

EP - 49

T2 - Proceedings of the 1999 7th International Symposium on Physical and Failure Analysis of Integrated Circuits

Y2 - 5 July 1999 through 9 July 1999

ER -

Impact of voids in Ti-salicided p⁺ polysilicon lines on TiSi₂ electrical properties

Abstract

Conference

ASJC Scopus Subject Areas

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