Improved electrical performance of erbium silicide Schottky diodes formed by pre-RTA amorphization of Si

E. J. Tan; K. L. Pey; D. Z. Chi; P. S. Lee; L. J. Tang

doi:10.1109/LED.2005.863142

Improved electrical performance of erbium silicide Schottky diodes formed by pre-RTA amorphization of Si

E. J. Tan^*, K. L. Pey, D. Z. Chi, P. S. Lee, L. J. Tang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Erbium silicide Schottky diodes formed on Si(001) substrate using rapid thermal annealing method show degraded Schottky-barrier height φ_Beff and ideality factor n due to the presence of silicide-induced microstructural defects which are likely sources of trap states. A method to improve the φ_Beff and n of the diodes utilizing in situ Ar plasma cleaning to induce a light amorphization of the Si(001) substrate is proposed. Even though the diodes formed in this way are less textured and have a poorer interface, they are free of silicide-induced microstructural defects, leading to an overall improvement in current transport and conduction properties which can be modeled using inhomogenous Schottky contact model.

Original language	English
Pages (from-to)	93-95
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	27
Issue number	2
DOIs	https://doi.org/10.1109/LED.2005.863142
Publication status	Published - Feb 2006
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Keywords

Amorphization
Erbium silicide
In situ plasma clean
Schottky diode
Structural defect

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10.1109/LED.2005.863142

Cite this

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title = "Improved electrical performance of erbium silicide Schottky diodes formed by pre-RTA amorphization of Si",

abstract = "Erbium silicide Schottky diodes formed on Si(001) substrate using rapid thermal annealing method show degraded Schottky-barrier height φBeff and ideality factor n due to the presence of silicide-induced microstructural defects which are likely sources of trap states. A method to improve the φBeff and n of the diodes utilizing in situ Ar plasma cleaning to induce a light amorphization of the Si(001) substrate is proposed. Even though the diodes formed in this way are less textured and have a poorer interface, they are free of silicide-induced microstructural defects, leading to an overall improvement in current transport and conduction properties which can be modeled using inhomogenous Schottky contact model.",

keywords = "Amorphization, Erbium silicide, In situ plasma clean, Schottky diode, Structural defect",

author = "Tan, \{E. J.\} and Pey, \{K. L.\} and Chi, \{D. Z.\} and Lee, \{P. S.\} and Tang, \{L. J.\}",

year = "2006",

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doi = "10.1109/LED.2005.863142",

language = "English",

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T1 - Improved electrical performance of erbium silicide Schottky diodes formed by pre-RTA amorphization of Si

AU - Tan, E. J.

AU - Pey, K. L.

AU - Chi, D. Z.

AU - Lee, P. S.

AU - Tang, L. J.

PY - 2006/2

Y1 - 2006/2

N2 - Erbium silicide Schottky diodes formed on Si(001) substrate using rapid thermal annealing method show degraded Schottky-barrier height φBeff and ideality factor n due to the presence of silicide-induced microstructural defects which are likely sources of trap states. A method to improve the φBeff and n of the diodes utilizing in situ Ar plasma cleaning to induce a light amorphization of the Si(001) substrate is proposed. Even though the diodes formed in this way are less textured and have a poorer interface, they are free of silicide-induced microstructural defects, leading to an overall improvement in current transport and conduction properties which can be modeled using inhomogenous Schottky contact model.

AB - Erbium silicide Schottky diodes formed on Si(001) substrate using rapid thermal annealing method show degraded Schottky-barrier height φBeff and ideality factor n due to the presence of silicide-induced microstructural defects which are likely sources of trap states. A method to improve the φBeff and n of the diodes utilizing in situ Ar plasma cleaning to induce a light amorphization of the Si(001) substrate is proposed. Even though the diodes formed in this way are less textured and have a poorer interface, they are free of silicide-induced microstructural defects, leading to an overall improvement in current transport and conduction properties which can be modeled using inhomogenous Schottky contact model.

KW - Amorphization

KW - Erbium silicide

KW - In situ plasma clean

KW - Schottky diode

KW - Structural defect

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DO - 10.1109/LED.2005.863142

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Improved electrical performance of erbium silicide Schottky diodes formed by pre-RTA amorphization of Si

Abstract

ASJC Scopus Subject Areas

Keywords

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