Improved electrical property of Sb-doped SnO 2 nanonets as measured by contact and non-contact approaches

Hongwei Liu; Sun Cheng; Lu Junpeng; Zheng Minrui; Lim Kim Yong; Nripan Mathews; Subodh G. Mhaisalkar; Tang Sing Hai; Zhang Xinhai; Sow Chorng Haur

doi:10.1039/c2ra20973j

Improved electrical property of Sb-doped SnO ₂ nanonets as measured by contact and non-contact approaches

Hongwei Liu, Sun Cheng, Lu Junpeng^*, Zheng Minrui, Lim Kim Yong, Nripan Mathews, Subodh G. Mhaisalkar, Tang Sing Hai, Zhang Xinhai, Sow Chorng Haur

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

This work reports the characterization of antimony doping effects on the electron transportation in SnO ₂ nanonets via a contact (field-effect transistor) and a non-contact (terahertz time-domain spectroscopy) approach. The doping influence is well demonstrated by the contact method through exploring the output characteristics of the devices. In addition, through the analysis of the terahertz time-domain spectra using Drude-Smith model, the non-contact method provides more precise characterization ascribed to the absence of extra effects such as contact resistance and nanowire-nanowire junction barriers.

Original language	English
Pages (from-to)	9590-9595
Number of pages	6
Journal	RSC Advances
Volume	2
Issue number	25
DOIs	https://doi.org/10.1039/c2ra20973j
Publication status	Published - Oct 21 2012
Externally published	Yes

ASJC Scopus Subject Areas

General Chemistry
General Chemical Engineering

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title = "Improved electrical property of Sb-doped SnO 2 nanonets as measured by contact and non-contact approaches",

abstract = "This work reports the characterization of antimony doping effects on the electron transportation in SnO 2 nanonets via a contact (field-effect transistor) and a non-contact (terahertz time-domain spectroscopy) approach. The doping influence is well demonstrated by the contact method through exploring the output characteristics of the devices. In addition, through the analysis of the terahertz time-domain spectra using Drude-Smith model, the non-contact method provides more precise characterization ascribed to the absence of extra effects such as contact resistance and nanowire-nanowire junction barriers.",

author = "Hongwei Liu and Sun Cheng and Lu Junpeng and Zheng Minrui and Yong, \{Lim Kim\} and Nripan Mathews and Mhaisalkar, \{Subodh G.\} and Hai, \{Tang Sing\} and Zhang Xinhai and Haur, \{Sow Chorng\}",

year = "2012",

month = oct,

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doi = "10.1039/c2ra20973j",

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volume = "2",

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T1 - Improved electrical property of Sb-doped SnO 2 nanonets as measured by contact and non-contact approaches

AU - Liu, Hongwei

AU - Cheng, Sun

AU - Junpeng, Lu

AU - Minrui, Zheng

AU - Yong, Lim Kim

AU - Mathews, Nripan

AU - Mhaisalkar, Subodh G.

AU - Hai, Tang Sing

AU - Xinhai, Zhang

AU - Haur, Sow Chorng

PY - 2012/10/21

Y1 - 2012/10/21

N2 - This work reports the characterization of antimony doping effects on the electron transportation in SnO 2 nanonets via a contact (field-effect transistor) and a non-contact (terahertz time-domain spectroscopy) approach. The doping influence is well demonstrated by the contact method through exploring the output characteristics of the devices. In addition, through the analysis of the terahertz time-domain spectra using Drude-Smith model, the non-contact method provides more precise characterization ascribed to the absence of extra effects such as contact resistance and nanowire-nanowire junction barriers.

AB - This work reports the characterization of antimony doping effects on the electron transportation in SnO 2 nanonets via a contact (field-effect transistor) and a non-contact (terahertz time-domain spectroscopy) approach. The doping influence is well demonstrated by the contact method through exploring the output characteristics of the devices. In addition, through the analysis of the terahertz time-domain spectra using Drude-Smith model, the non-contact method provides more precise characterization ascribed to the absence of extra effects such as contact resistance and nanowire-nanowire junction barriers.

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ER -

Improved electrical property of Sb-doped SnO ₂ nanonets as measured by contact and non-contact approaches

Abstract

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