Improved NiSi salicide process using presilicide N2+ implant for MOSFETs

P. S. Lee; K. L. Pey; D. Mangelinck; J. Ding; A. T.S. Wee; L. Chan

doi:10.1109/55.887467

Improved NiSi salicide process using presilicide N₂⁺ implant for MOSFETs

P. S. Lee^*, K. L. Pey, D. Mangelinck, J. Ding, A. T.S. Wee, L. Chan

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

An improved Ni salicide process has been developed by incorporating nitrogen (N₂⁺) implant prior to Ni deposition to widen the salicide processing temperature window. Salicided poly-Si gate and active regions of different linewidths show improved thermal stability with low sheet resistance up to a salicidation temperature of 700 and 750 °C, respectively. Nitrogen was found to be confined within the NiSi layer and reduced agglomeration of the silicide. Phase transformation to the undesirable high resistivity NiSi₂ phase was delayed, likely due to a change in the interfacial energy. The electrical results of N₂⁺ implanted Ni-salicided PMOSFETs show higher drive current and lower junction leakage as compared to devices with no N₂⁺ implant.

Original language	English
Pages (from-to)	566-568
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	21
Issue number	12
DOIs	https://doi.org/10.1109/55.887467
Publication status	Published - Dec 2000
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Improved NiSi salicide process using presilicide N2+ implant for MOSFETs",

abstract = "An improved Ni salicide process has been developed by incorporating nitrogen (N2+) implant prior to Ni deposition to widen the salicide processing temperature window. Salicided poly-Si gate and active regions of different linewidths show improved thermal stability with low sheet resistance up to a salicidation temperature of 700 and 750 °C, respectively. Nitrogen was found to be confined within the NiSi layer and reduced agglomeration of the silicide. Phase transformation to the undesirable high resistivity NiSi2 phase was delayed, likely due to a change in the interfacial energy. The electrical results of N2+ implanted Ni-salicided PMOSFETs show higher drive current and lower junction leakage as compared to devices with no N2+ implant.",

author = "Lee, {P. S.} and Pey, {K. L.} and D. Mangelinck and J. Ding and Wee, {A. T.S.} and L. Chan",

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T1 - Improved NiSi salicide process using presilicide N2+ implant for MOSFETs

AU - Lee, P. S.

AU - Pey, K. L.

AU - Mangelinck, D.

AU - Ding, J.

AU - Wee, A. T.S.

AU - Chan, L.

PY - 2000/12

Y1 - 2000/12

N2 - An improved Ni salicide process has been developed by incorporating nitrogen (N2+) implant prior to Ni deposition to widen the salicide processing temperature window. Salicided poly-Si gate and active regions of different linewidths show improved thermal stability with low sheet resistance up to a salicidation temperature of 700 and 750 °C, respectively. Nitrogen was found to be confined within the NiSi layer and reduced agglomeration of the silicide. Phase transformation to the undesirable high resistivity NiSi2 phase was delayed, likely due to a change in the interfacial energy. The electrical results of N2+ implanted Ni-salicided PMOSFETs show higher drive current and lower junction leakage as compared to devices with no N2+ implant.

AB - An improved Ni salicide process has been developed by incorporating nitrogen (N2+) implant prior to Ni deposition to widen the salicide processing temperature window. Salicided poly-Si gate and active regions of different linewidths show improved thermal stability with low sheet resistance up to a salicidation temperature of 700 and 750 °C, respectively. Nitrogen was found to be confined within the NiSi layer and reduced agglomeration of the silicide. Phase transformation to the undesirable high resistivity NiSi2 phase was delayed, likely due to a change in the interfacial energy. The electrical results of N2+ implanted Ni-salicided PMOSFETs show higher drive current and lower junction leakage as compared to devices with no N2+ implant.

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Improved NiSi salicide process using presilicide N₂⁺ implant for MOSFETs

Abstract

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