Improved pentacene device characteristics with sol-gel SiO2 dielectric films

T. Cahyadi; H. S. Tan; E. B. Namdas; S. G. Mhaisalkar; P. S. Lee; Z. K. Chen; C. M. Ng; F. Y.C. Boey

doi:10.1016/j.orgel.2006.12.006

Improved pentacene device characteristics with sol-gel SiO₂ dielectric films

T. Cahyadi, H. S. Tan, E. B. Namdas, S. G. Mhaisalkar^*, P. S. Lee, Z. K. Chen, C. M. Ng, F. Y.C. Boey

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The interfacial interactions between semiconductors and gate dielectrics have a profound influence on the device characteristics of field effect transistors (FETs). This paper reports on the concept of introducing a sol-gel SiO₂ as inorganic capping layer to significantly improve device characteristics of pentacene-based FETs. The smoother film surfaces of sol-gel SiO₂ (1.9 Å root-mean-square) induced larger pentacene grain sizes, and led to hole mobilities of 1.43 cm²/Vs, on-off ratio of 10⁷, and a subthreshold swing of 102 mV/decade when operating at -20 V.

Original language	English
Pages (from-to)	455-459
Number of pages	5
Journal	Organic Electronics
Volume	8
Issue number	4
DOIs	https://doi.org/10.1016/j.orgel.2006.12.006
Publication status	Published - Aug 2007
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Biomaterials
General Chemistry
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Keywords

Dielectrics
Field effect transistors
Pentacene
Sol-gel

Access to Document

10.1016/j.orgel.2006.12.006

Cite this

@article{8376d93e07084031b662bab667d6991a,

title = "Improved pentacene device characteristics with sol-gel SiO2 dielectric films",

abstract = "The interfacial interactions between semiconductors and gate dielectrics have a profound influence on the device characteristics of field effect transistors (FETs). This paper reports on the concept of introducing a sol-gel SiO2 as inorganic capping layer to significantly improve device characteristics of pentacene-based FETs. The smoother film surfaces of sol-gel SiO2 (1.9 {\AA} root-mean-square) induced larger pentacene grain sizes, and led to hole mobilities of 1.43 cm2/Vs, on-off ratio of 107, and a subthreshold swing of 102 mV/decade when operating at -20 V.",

keywords = "Dielectrics, Field effect transistors, Pentacene, Sol-gel",

author = "T. Cahyadi and Tan, {H. S.} and Namdas, {E. B.} and Mhaisalkar, {S. G.} and Lee, {P. S.} and Chen, {Z. K.} and Ng, {C. M.} and Boey, {F. Y.C.}",

year = "2007",

month = aug,

doi = "10.1016/j.orgel.2006.12.006",

language = "English",

volume = "8",

pages = "455--459",

journal = "Organic Electronics",

issn = "1566-1199",

publisher = "Elsevier",

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T1 - Improved pentacene device characteristics with sol-gel SiO2 dielectric films

AU - Cahyadi, T.

AU - Tan, H. S.

AU - Namdas, E. B.

AU - Mhaisalkar, S. G.

AU - Lee, P. S.

AU - Chen, Z. K.

AU - Ng, C. M.

AU - Boey, F. Y.C.

PY - 2007/8

Y1 - 2007/8

N2 - The interfacial interactions between semiconductors and gate dielectrics have a profound influence on the device characteristics of field effect transistors (FETs). This paper reports on the concept of introducing a sol-gel SiO2 as inorganic capping layer to significantly improve device characteristics of pentacene-based FETs. The smoother film surfaces of sol-gel SiO2 (1.9 Å root-mean-square) induced larger pentacene grain sizes, and led to hole mobilities of 1.43 cm2/Vs, on-off ratio of 107, and a subthreshold swing of 102 mV/decade when operating at -20 V.

AB - The interfacial interactions between semiconductors and gate dielectrics have a profound influence on the device characteristics of field effect transistors (FETs). This paper reports on the concept of introducing a sol-gel SiO2 as inorganic capping layer to significantly improve device characteristics of pentacene-based FETs. The smoother film surfaces of sol-gel SiO2 (1.9 Å root-mean-square) induced larger pentacene grain sizes, and led to hole mobilities of 1.43 cm2/Vs, on-off ratio of 107, and a subthreshold swing of 102 mV/decade when operating at -20 V.

KW - Dielectrics

KW - Field effect transistors

KW - Pentacene

KW - Sol-gel

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DO - 10.1016/j.orgel.2006.12.006

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JO - Organic Electronics

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