Improvement of organic light-emitting diodes performance by the insertion of a Si3N4 layer

Hongjin Jiang; Yan Zhou; Boon Slew Ooi; Yuwen Chen; Terence Wee; Yee Loy Lam; Jingsong Huang; Shiyong Liu

doi:10.1016/S0040-6090(99)00975-X

Improvement of organic light-emitting diodes performance by the insertion of a Si₃N₄ layer

Hongjin Jiang, Yan Zhou, Boon Slew Ooi, Yuwen Chen, Terence Wee, Yee Loy Lam, Jingsong Huang, Shiyong Liu

Research output: Contribution to journal › Conference article › peer-review

75 Citations (Scopus)

Abstract

The interface between the organic layer and the metallic layer of an organic light-emitting diode (OLED) is crucial to the stability and performance of the device. A uniform thin silicon nitride film, used as an anode modification layer, has been deposited on ITO coated glass by plasma enhanced chemical vapor deposition used as an anode modification layer. This thin film improves the interface of the electrode and the organic layer, prevents the diffusion of the metallic ions from the ITO anode to the organic layer and restrains the surface noisy leakage current. The device performance has thus been improved. The maximum electroluminescence (EL) efficiency of the device with the silicon nitride film is of several times higher than that of the device without it.

Original language	English
Pages (from-to)	25-28
Number of pages	4
Journal	Thin Solid Films
Volume	363
Issue number	1
DOIs	https://doi.org/10.1016/S0040-6090(99)00975-X
Publication status	Published - Mar 1 2000
Externally published	Yes
Event	The Asia-Pacific Symposium on Organic Electroluminescent Materials and Devices - Hong Kong, Hong Kong Duration: Jun 8 1999 → Jun 11 1999

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/S0040-6090(99)00975-X

Cite this

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title = "Improvement of organic light-emitting diodes performance by the insertion of a Si3N4 layer",

abstract = "The interface between the organic layer and the metallic layer of an organic light-emitting diode (OLED) is crucial to the stability and performance of the device. A uniform thin silicon nitride film, used as an anode modification layer, has been deposited on ITO coated glass by plasma enhanced chemical vapor deposition used as an anode modification layer. This thin film improves the interface of the electrode and the organic layer, prevents the diffusion of the metallic ions from the ITO anode to the organic layer and restrains the surface noisy leakage current. The device performance has thus been improved. The maximum electroluminescence (EL) efficiency of the device with the silicon nitride film is of several times higher than that of the device without it.",

author = "Hongjin Jiang and Yan Zhou and Ooi, {Boon Slew} and Yuwen Chen and Terence Wee and Lam, {Yee Loy} and Jingsong Huang and Shiyong Liu",

year = "2000",

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TY - JOUR

T1 - Improvement of organic light-emitting diodes performance by the insertion of a Si3N4 layer

AU - Jiang, Hongjin

AU - Zhou, Yan

AU - Ooi, Boon Slew

AU - Chen, Yuwen

AU - Wee, Terence

AU - Lam, Yee Loy

AU - Huang, Jingsong

AU - Liu, Shiyong

PY - 2000/3/1

Y1 - 2000/3/1

N2 - The interface between the organic layer and the metallic layer of an organic light-emitting diode (OLED) is crucial to the stability and performance of the device. A uniform thin silicon nitride film, used as an anode modification layer, has been deposited on ITO coated glass by plasma enhanced chemical vapor deposition used as an anode modification layer. This thin film improves the interface of the electrode and the organic layer, prevents the diffusion of the metallic ions from the ITO anode to the organic layer and restrains the surface noisy leakage current. The device performance has thus been improved. The maximum electroluminescence (EL) efficiency of the device with the silicon nitride film is of several times higher than that of the device without it.

AB - The interface between the organic layer and the metallic layer of an organic light-emitting diode (OLED) is crucial to the stability and performance of the device. A uniform thin silicon nitride film, used as an anode modification layer, has been deposited on ITO coated glass by plasma enhanced chemical vapor deposition used as an anode modification layer. This thin film improves the interface of the electrode and the organic layer, prevents the diffusion of the metallic ions from the ITO anode to the organic layer and restrains the surface noisy leakage current. The device performance has thus been improved. The maximum electroluminescence (EL) efficiency of the device with the silicon nitride film is of several times higher than that of the device without it.

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DO - 10.1016/S0040-6090(99)00975-X

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