Abstract
To verify the positive effect of thin tin oxide layer on the surface of CZTS to solar cell VOC, a thin layer of SnOx was deposited onto the CZTS mono grains by ALD. For confirmation of the effect, the SnOx layer was tested in combination with two different buffer materials - CBD CdS and ZnO,S. The depositon of a SnOx inter-layer resulted in increased VOC of CZTS/CdS solar cell from 666 mV to 724 mV and CZTS/ZnO,S solar cell from 617 mV to 719 mV. The tin oxide layer did not affect the FF and jSC values, so the improvement in VOC led to a direct improvement in CZTS/CdS solar cell PCE. EQE measurements did not show any shift in material absorption edge/band gap, hence the VOC increase can be fully attributed to the interface improvements, like to a reduced interface recombination rate. Apparently the additional SnOx layer seems to allow for better collection of the carriers at longer wavelength region (650 nm - 750 nm).
Original language | English |
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Title of host publication | 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Electronic) | 9781479979448 |
DOIs | |
Publication status | Published - Dec 14 2015 |
Externally published | Yes |
Event | 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: Jun 14 2015 → Jun 19 2015 |
Publication series
Name | 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 |
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Conference
Conference | 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 |
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Country/Territory | United States |
City | New Orleans |
Period | 6/14/15 → 6/19/15 |
Bibliographical note
Publisher Copyright:© 2015 IEEE.
ASJC Scopus Subject Areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Keywords
- charge carrier barrier
- CZTS
- kesterite
- mono grain layer solar cell
- open circuit voltage
- tin oxide