In situ XRD analysis of Ni(Pt)/Si(100) reactions in low temperature regime ≤400 °C

P. S. Lee; K. L. Pey; D. Mangelinck; J. Ding; L. Chan

doi:10.1016/j.ssc.2003.09.004

In situ XRD analysis of Ni(Pt)/Si(100) reactions in low temperature regime ≤400 °C

P. S. Lee, K. L. Pey^*, D. Mangelinck, J. Ding, L. Chan

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The key feature of this paper is to highlight the use of an in situ XRD technique to the study of the initial reaction of Ni(Pt) on Si(100) isothermally. The concentration of Ni and Pt as a function of time in the low temperature range of less than 400 °C was evaluated. The XRD results show that the solid state reaction started with a outdiffusion of Ni from the Ni(Pt) alloy during the formation of Ni₂Si prior to the formation of Ni(Pt)Si. This in situ technique is important for the characterization and the study of the nucleation and kinetics of the first phase formation of advanced alloy silicides.

Original language	English
Pages (from-to)	325-328
Number of pages	4
Journal	Solid State Communications
Volume	128
Issue number	9-10
DOIs	https://doi.org/10.1016/j.ssc.2003.09.004
Publication status	Published - Dec 2003
Externally published	Yes

ASJC Scopus Subject Areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

Keywords

A. Semiconductor
A. Surfaces and interfaces
A. Thin films

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10.1016/j.ssc.2003.09.004

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title = "In situ XRD analysis of Ni(Pt)/Si(100) reactions in low temperature regime ≤400 °C",

abstract = "The key feature of this paper is to highlight the use of an in situ XRD technique to the study of the initial reaction of Ni(Pt) on Si(100) isothermally. The concentration of Ni and Pt as a function of time in the low temperature range of less than 400 °C was evaluated. The XRD results show that the solid state reaction started with a outdiffusion of Ni from the Ni(Pt) alloy during the formation of Ni2Si prior to the formation of Ni(Pt)Si. This in situ technique is important for the characterization and the study of the nucleation and kinetics of the first phase formation of advanced alloy silicides.",

keywords = "A. Semiconductor, A. Surfaces and interfaces, A. Thin films",

author = "Lee, {P. S.} and Pey, {K. L.} and D. Mangelinck and J. Ding and L. Chan",

year = "2003",

month = dec,

doi = "10.1016/j.ssc.2003.09.004",

language = "English",

volume = "128",

pages = "325--328",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

number = "9-10",

}

TY - JOUR

T1 - In situ XRD analysis of Ni(Pt)/Si(100) reactions in low temperature regime ≤400 °C

AU - Lee, P. S.

AU - Pey, K. L.

AU - Mangelinck, D.

AU - Ding, J.

AU - Chan, L.

PY - 2003/12

Y1 - 2003/12

N2 - The key feature of this paper is to highlight the use of an in situ XRD technique to the study of the initial reaction of Ni(Pt) on Si(100) isothermally. The concentration of Ni and Pt as a function of time in the low temperature range of less than 400 °C was evaluated. The XRD results show that the solid state reaction started with a outdiffusion of Ni from the Ni(Pt) alloy during the formation of Ni2Si prior to the formation of Ni(Pt)Si. This in situ technique is important for the characterization and the study of the nucleation and kinetics of the first phase formation of advanced alloy silicides.

AB - The key feature of this paper is to highlight the use of an in situ XRD technique to the study of the initial reaction of Ni(Pt) on Si(100) isothermally. The concentration of Ni and Pt as a function of time in the low temperature range of less than 400 °C was evaluated. The XRD results show that the solid state reaction started with a outdiffusion of Ni from the Ni(Pt) alloy during the formation of Ni2Si prior to the formation of Ni(Pt)Si. This in situ technique is important for the characterization and the study of the nucleation and kinetics of the first phase formation of advanced alloy silicides.

KW - A. Semiconductor

KW - A. Surfaces and interfaces

KW - A. Thin films

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U2 - 10.1016/j.ssc.2003.09.004

DO - 10.1016/j.ssc.2003.09.004

M3 - Article

AN - SCOPUS:0141894755

SN - 0038-1098

VL - 128

SP - 325

EP - 328

JO - Solid State Communications

JF - Solid State Communications

IS - 9-10

ER -

In situ XRD analysis of Ni(Pt)/Si(100) reactions in low temperature regime ≤400 °C

Abstract

ASJC Scopus Subject Areas

Keywords

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