Increased mobility for layer-by-layer transferred chemical vapor deposited graphene/boron-nitride thin films

Osama M. Nayfeh; A. Glen Birdwell; Cheng Tan; Madan Dubey; Hemtej Gullapalli; Zheng Liu; Arava Leela Mohana Reddy; Pulickel M. Ajayan

doi:10.1063/1.4794533

Increased mobility for layer-by-layer transferred chemical vapor deposited graphene/boron-nitride thin films

Osama M. Nayfeh, A. Glen Birdwell, Cheng Tan, Madan Dubey^*, Hemtej Gullapalli, Zheng Liu, Arava Leela Mohana Reddy, Pulickel M. Ajayan

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

Large-area chemical vapor deposited graphene/boron-nitride (G/BN) thin films are co-transferred layer-by-layer to silicon-di-Oxide (SiO₂) substrates, and transistors are constructed and examined. Raman spectra and high resolution transmission electron microscopy imaging show films of high quality. The graphene/boron-nitride/SiO₂ devices have a significantly increased peak electron/hole mobility of 3400/2200 cm²/Vs with a reduced effective doping density over reference graphene/SiO₂ devices. The mobility dependence as a function of carrier density is compared with a physically based empirical model and is in agreement with the improvements due to a consistent reduction in the substrate induced phonon and impurity scattering and an improvement in the overall surface quality owed to the boron-nitride interlayer that separates the graphene from the SiO ₂. Large-area G/BN thin films are promising for future high performance thin film electronic devices.

Original language	English
Article number	103115
Journal	Applied Physics Letters
Volume	102
Issue number	10
DOIs	https://doi.org/10.1063/1.4794533
Publication status	Published - Mar 11 2013
Externally published	Yes

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4794533

Cite this

@article{af2afe79187f439a9e5e9d73cb1f04b6,

title = "Increased mobility for layer-by-layer transferred chemical vapor deposited graphene/boron-nitride thin films",

abstract = "Large-area chemical vapor deposited graphene/boron-nitride (G/BN) thin films are co-transferred layer-by-layer to silicon-di-Oxide (SiO2) substrates, and transistors are constructed and examined. Raman spectra and high resolution transmission electron microscopy imaging show films of high quality. The graphene/boron-nitride/SiO2 devices have a significantly increased peak electron/hole mobility of 3400/2200 cm2/Vs with a reduced effective doping density over reference graphene/SiO2 devices. The mobility dependence as a function of carrier density is compared with a physically based empirical model and is in agreement with the improvements due to a consistent reduction in the substrate induced phonon and impurity scattering and an improvement in the overall surface quality owed to the boron-nitride interlayer that separates the graphene from the SiO 2. Large-area G/BN thin films are promising for future high performance thin film electronic devices.",

author = "Nayfeh, {Osama M.} and {Glen Birdwell}, A. and Cheng Tan and Madan Dubey and Hemtej Gullapalli and Zheng Liu and {Leela Mohana Reddy}, Arava and Ajayan, {Pulickel M.}",

year = "2013",

month = mar,

day = "11",

doi = "10.1063/1.4794533",

language = "English",

volume = "102",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "10",

}

TY - JOUR

T1 - Increased mobility for layer-by-layer transferred chemical vapor deposited graphene/boron-nitride thin films

AU - Nayfeh, Osama M.

AU - Glen Birdwell, A.

AU - Tan, Cheng

AU - Dubey, Madan

AU - Gullapalli, Hemtej

AU - Liu, Zheng

AU - Leela Mohana Reddy, Arava

AU - Ajayan, Pulickel M.

PY - 2013/3/11

Y1 - 2013/3/11

N2 - Large-area chemical vapor deposited graphene/boron-nitride (G/BN) thin films are co-transferred layer-by-layer to silicon-di-Oxide (SiO2) substrates, and transistors are constructed and examined. Raman spectra and high resolution transmission electron microscopy imaging show films of high quality. The graphene/boron-nitride/SiO2 devices have a significantly increased peak electron/hole mobility of 3400/2200 cm2/Vs with a reduced effective doping density over reference graphene/SiO2 devices. The mobility dependence as a function of carrier density is compared with a physically based empirical model and is in agreement with the improvements due to a consistent reduction in the substrate induced phonon and impurity scattering and an improvement in the overall surface quality owed to the boron-nitride interlayer that separates the graphene from the SiO 2. Large-area G/BN thin films are promising for future high performance thin film electronic devices.

AB - Large-area chemical vapor deposited graphene/boron-nitride (G/BN) thin films are co-transferred layer-by-layer to silicon-di-Oxide (SiO2) substrates, and transistors are constructed and examined. Raman spectra and high resolution transmission electron microscopy imaging show films of high quality. The graphene/boron-nitride/SiO2 devices have a significantly increased peak electron/hole mobility of 3400/2200 cm2/Vs with a reduced effective doping density over reference graphene/SiO2 devices. The mobility dependence as a function of carrier density is compared with a physically based empirical model and is in agreement with the improvements due to a consistent reduction in the substrate induced phonon and impurity scattering and an improvement in the overall surface quality owed to the boron-nitride interlayer that separates the graphene from the SiO 2. Large-area G/BN thin films are promising for future high performance thin film electronic devices.

UR - http://www.scopus.com/inward/record.url?scp=84875148700&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84875148700&partnerID=8YFLogxK

U2 - 10.1063/1.4794533

DO - 10.1063/1.4794533

M3 - Article

AN - SCOPUS:84875148700

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 103115

ER -

Increased mobility for layer-by-layer transferred chemical vapor deposited graphene/boron-nitride thin films

Abstract

ASJC Scopus Subject Areas

Access to Document

Other files and links

Fingerprint

Cite this